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STF21N65M5
+БОМMOSFET N-CH 650V 17A TO220FP
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ПроизводительSTМикроэлектроника
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Мфр. Часть #STF21N65M5
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В наличии2685
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | MDmesh™ V |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 17A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 190mOhm @ 8.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 50 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 1950 pF @ 100 V |
| PowerDissipation(Max) | 30W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
Обзор
Description
STF21N65M5 is STMicroelectronics’ high‑voltage N‑channel power MOSFET (STF family). It is designed for switching in offline power applications such as SMPS, adapters, chargers, and motor drives. Key points:
- VDS: 650 V; ID: about 21 A (continuous).
- Features rugged switching, avalanche robustness, and a moderate gate charge for efficient drive.
- Gate drive: typically needs around 10 V to reach low RDS(on); threshold is roughly 2–4 V.
- Packages: available in common power packages (e.g., TO‑220, D²PAK) for through‑hole or surface mounting with adequate heat sinking.
- For exact RDS(on), gate charge, safe operating area, and package options, consult the official datasheet.
If you’re designing a topology (buck, boost, flyback, LLC), verify the precise specs from the datasheet and ensure proper heatsinking and gate drive.
- VDS: 650 V; ID: about 21 A (continuous).
- Features rugged switching, avalanche robustness, and a moderate gate charge for efficient drive.
- Gate drive: typically needs around 10 V to reach low RDS(on); threshold is roughly 2–4 V.
- Packages: available in common power packages (e.g., TO‑220, D²PAK) for through‑hole or surface mounting with adequate heat sinking.
- For exact RDS(on), gate charge, safe operating area, and package options, consult the official datasheet.
If you’re designing a topology (buck, boost, flyback, LLC), verify the precise specs from the datasheet and ensure proper heatsinking and gate drive.
Features
Here are the main features of STF21N65M5 (STMicroelectronics):
- N-channel enhancement-mode power MOSFET
- VDS: 650 V
- ID (continuous): ~21 A
- RDS(on): roughly 1.0–1.6 Ω (depends on package and temperature; typical at VGS = 10 V)
- Gate threshold (VGS(th)): ~2–4 V; VGS rating ±20 V; drive voltage typically 10 V recommended
- Fast switching characteristics with low gate charge and suitable capacitances
- Avalanche energy ruggedness for inductive-load protection
- Applications: high-voltage switch-mode power supplies, PFC, offline converters, motor drives
- Packages: TO-220, D²PAK (TO-263), DPAK (TO-252); RoHS compliant
Note: Always verify exact figures from the datasheet for the specific package and lot, as RDS(on) and parameters vary with temperature and part variant.
- N-channel enhancement-mode power MOSFET
- VDS: 650 V
- ID (continuous): ~21 A
- RDS(on): roughly 1.0–1.6 Ω (depends on package and temperature; typical at VGS = 10 V)
- Gate threshold (VGS(th)): ~2–4 V; VGS rating ±20 V; drive voltage typically 10 V recommended
- Fast switching characteristics with low gate charge and suitable capacitances
- Avalanche energy ruggedness for inductive-load protection
- Applications: high-voltage switch-mode power supplies, PFC, offline converters, motor drives
- Packages: TO-220, D²PAK (TO-263), DPAK (TO-252); RoHS compliant
Note: Always verify exact figures from the datasheet for the specific package and lot, as RDS(on) and parameters vary with temperature and part variant.
Pinout
- Pin count: 3 (Gate, Drain, Source)
- Function: N-channel enhancement-mode power MOSFET used as a high-voltage switch in power electronics (e.g., power supplies, inverters).
- Function: N-channel enhancement-mode power MOSFET used as a high-voltage switch in power electronics (e.g., power supplies, inverters).
Manufacturer
STMicroelectronics (STMicro) is the manufacturer. It is a European multinational semiconductor company headquartered near Geneva, Switzerland. STMicro designs, manufactures, and markets a wide range of semiconductor products—including power MOSFETs, sensors, microcontrollers, and analog/digital ICs—for automotive, industrial, communications, and consumer electronics.
Application
STF21N65M5 is a high-voltage N-channel power MOSFET (about 650 V). Common application areas include:
- Switch-mode power supplies (PFC stages, primary-side switching) and DC-DC converters
- AC-DC front ends and telecom/industrial power supplies
- Solar/wower renewable inverters and UPS systems
- Motor drives and variable-speed control
- Battery chargers and grid-tied power interfaces
Used wherever high-voltage switching and efficient power conversion are required.
- Switch-mode power supplies (PFC stages, primary-side switching) and DC-DC converters
- AC-DC front ends and telecom/industrial power supplies
- Solar/wower renewable inverters and UPS systems
- Motor drives and variable-speed control
- Battery chargers and grid-tied power interfaces
Used wherever high-voltage switching and efficient power conversion are required.
Package
STF21N65M5 is a ST STripFET II N-channel MOSFET in a D²PAK (TO-263) surface-mount package.
