STGWT60H65DFB

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STGWT60H65DFB

+БОМ

IGBT TRENCH FS 650V 80A TO-3P

  • ПроизводительSTМикроэлектроника

  • Мфр. Часть #STGWT60H65DFB

  • В наличии8948

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
PartStatus Active
IGBTType Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max) 650 V
Current-Collector(Ic)(Max) 80 A
Current-CollectorPulsed(Icm) 240 A
Vce(on)(Max)@Vge,Ic 2V @ 15V, 60A
Power-Max 375 W
SwitchingEnergy 1.09mJ (on), 626µJ (off)
InputType Standard
GateCharge 306 nC
Td(on/off)@25°C 51ns/160ns
TestCondition 400V, 60A, 5Ohm, 15V
ReverseRecoveryTime(trr) 60 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-3P-3, SC-65-3
SupplierDevicePackage TO-3P
BaseProductNumber STGWT60

Обзор

Description

The STGWT60H65DFB is a high-performance N-channel MOSFET designed for use in various power applications, particularly in the automotive and industrial sectors. With a maximum voltage rating of 650V and a continuous drain current of 60A, this device offers robust performance and efficiency. It features low on-resistance (RDS(on)), which minimizes conduction losses, enhancing overall system efficiency.
The MOSFET is optimized for fast switching speeds, making it suitable for high-frequency applications, including switch-mode power supplies and inverters. It also exhibits excellent thermal stability, which is crucial for reliable operation under varying temperature conditions.
Packaging in a TO-247 format allows for effective heat dissipation, further promoting its usability in high-power applications. Overall, the STGWT60H65DFB is an ideal choice for engineers seeking a reliable, efficient, and high-voltage MOSFET solution.

Equivalent

The STGWT60H65DFB is a 650V N-channel MOSFET. Equivalent products include the Infineon IPW65R065C6, ON Semiconductor NTP65H120, and Vishay SiHF065N65. Always verify specifications such as voltage, current rating, R_DS(on), and package type to ensure compatibility for your specific application.

Features

The STGWT60H65DFB is a high-performance MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It has a maximum voltage rating of 650V, suitable for medium to high voltage applications.
2. Current Rating: The device can handle a continuous drain current of up to 60A, making it suitable for high-power applications.
3. Low Gate Charge: This MOSFET features a low gate charge (Qg), which enhances switching efficiency and reduces power losses in applications.
4. RDS(on): It offers a low on-resistance, resulting in improved conduction efficiency and reduced heat generation.
5. Temperature Range: The device operates effectively across a wide temperature range, allowing for versatile application in challenging environments.
6. Package: Typically available in a TO-220 or similar package, facilitating easy integration into circuit designs.
These features make the STGWT60H65DFB ideal for use in power supplies, inverters, and motor control applications.

Pinout

The STGWT60H65DFB is a 650V N-channel MOSFET with a pin count of 7. Its primary functions include switching and amplifying signals in various applications such as power management, motor control, and high-frequency switching. The pin configuration typically includes:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The output terminal where the current flows out.
3. Source (S): The terminal that connects to ground or the negative voltage in the case of a high-side switch.
4. Body Diode: Integrated within the MOSFET, allowing current flow in the reverse direction when the MOSFET is off.
This component is designed for applications requiring efficient switching at high voltages, offering low R_DS(on) and fast switching capabilities, making it suitable for use in converters, inverters, and other power electronic circuits.

Manufacturer

The STGWT60H65DFB is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor solutions, including microcontrollers, sensors, power management devices, and analog ICs. The company serves various sectors, including automotive, industrial, personal electronics, and communications.
STMicroelectronics is known for its innovation in power technologies and is a key player in the semiconductor market, focusing on enabling energy-efficient products and applications. Their products are widely used in consumer electronics, automotive systems, and industrial automation, among other areas. The company emphasizes sustainability and aims to create solutions that address environmental challenges while enhancing technological capabilities.

Application

The STGWT60H65DFB is a high-voltage, N-channel MOSFET used in various applications, primarily in power electronics. Key application areas include:
1. Power Supplies: Efficient switching in AC-DC converters and DC-DC converters.
2. Motor Drives: Used in inverter circuits for driving electric motors.
3. Renewable Energy: Inverters for solar power systems and wind energy.
4. Industrial Equipment: Control systems for automation and robotics.
5. Automotive: Power management in electric vehicles and hybrid systems.
Its high voltage and low on-resistance characteristics enhance performance and energy efficiency in these applications.

Package

The STGWT60H65DFB is packaged in a TO-247 format. This package type is designed for high-power applications, providing good thermal performance and ease of heatsinking.

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