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STH315N10F7-2
+БОМMOSFET N-CH 100V 180A H2PAK-2
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ПроизводительSTМикроэлектроника
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Мфр. Часть #STH315N10F7-2
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Лист данных STH315N10F7-2 DataSheet
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В наличии1381
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, DeepGATE™, STripFET™ VII |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 180A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 2.3mOhm @ 60A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 180 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 12800 pF @ 25 V |
| PowerDissipation(Max) | 315W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | H2Pak-2 |
Обзор
Description
The key features of the STH315N10F7-2 typically include a low on-resistance, which reduces power loss, and high-speed switching capability, making it ideal for high-frequency applications. It can handle significant power levels while maintaining reliability and stability. This MOSFET is commonly used in automotive, industrial, and consumer electronics for applications such as power supplies, motor drivers, and inverter circuits.
Its compact design and robust performance make it suitable for environments that require both power density and thermal efficiency. The "2" in the model might refer to packaging or a version iteration, but this can vary by manufacturer.
Equivalent
Features
1. N-channel MOSFET: Facilitates efficient electron flow, suitable for high-speed switching.
2. Low On-Resistance: Offers low conduction losses, improving efficiency.
3. High Current Capability: Can handle high currents, making it ideal for power applications.
4. Voltage Rating: Typically offers a high voltage rating, suitable for various applications.
5. Fast Switching: Enables quick transitions between on and off states, important for high-frequency applications.
6. Enhanced Ruggedness: Designed to withstand high stress and harsh conditions.
7. Applications: Commonly used in power management, motor control, and conversion systems.
These features make the STH315N10F7-2 particularly effective in applications requiring reliable and efficient power handling and switching capabilities. Always refer to the manufacturer's datasheet for specific electrical characteristics and ratings.
Pinout
1. Gate (G): This pin is responsible for controlling the MOSFET. By applying a voltage to the gate, you can turn the MOSFET on or off. It effectively controls the flow of current between the drain and source.
2. Drain (D): This pin is where the current flows out when the MOSFET is in the 'on' state. It is connected to the load in most applications.
3. Source (S): This is the pin through which current enters the MOSFET. It is typically connected to ground in N-channel configurations.
The STH315N10F7-2 is used for various purposes, including switching and amplification in power management applications, offering high efficiency due to its low on-state resistance and fast switching capabilities.
Manufacturer
Application
1. Automotive: Used in powertrain systems, electric and hybrid vehicles for efficient power management.
2. Industrial: Employed in motor drives, inverters, and power supplies due to its ability to handle high currents.
3. Consumer Electronics: Utilized in power adapters and battery charging circuits for improved efficiency.
4. Telecommunications: Provides power regulation and management in networking and communication devices.
5. Renewable Energy: Applied in solar inverters and other renewable energy systems to enhance energy conversion efficiency.
These applications leverage the MOSFET's low on-resistance and fast switching capabilities.