STP110N10F7

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STP110N10F7

+БОМ

MOSFET N CH 100V 110A TO-220

  • ПроизводительSTМикроэлектроника

  • Мфр. Часть #STP110N10F7

  • Лист данных STP110N10F7 DataSheet

  • Пакет TO-220

  • В наличии1854

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Спецификации

Атрибут Ценность
Package Tube
Series DeepGATE™, STripFET™ VII
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 110A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 7mOhm @ 55A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 60 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 5500 pF @ 50 V
PowerDissipation(Max) 150W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

Обзор

Description

The STP110N10F7 is an N-channel power MOSFET from STMicroelectronics, designed for high-efficiency switching applications. Key features include:
- Voltage Rating: 100V
- Current Rating: 110A (continuous)
- Low On-Resistance (RDS(on)): 3.7mΩ (max at 10V VGS)
- Fast Switching: Optimized for high-speed operation
- Package: TO-220 (through-hole) for easy mounting
Ideal for DC-DC converters, motor control, and power management in automotive, industrial, and consumer electronics. Its low conduction losses and robust thermal performance make it suitable for high-current applications.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the STP110N10F7 (100V, 110A N-channel MOSFET) include:
- IRF1404 (40V, 162A) – Lower voltage but higher current.
- IRF3205 (55V, 110A) – Common alternative.
- FDP8870 (80V, 120A) – Similar specs.
- AUIRF1405 (55V, 169A) – Higher current.
- IPB107N10N5 (100V, 107A) – Close match.
Check datasheets for exact compatibility in your application.

Features

The STP110N10F7 is an N-channel MOSFET with the following key features:
- Voltage Rating: 100V
- Current Rating: 110A (continuous)
- Low On-Resistance (RDS(on)): 3.7 mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-efficiency applications
- Avalanche Rated: Robust against inductive load spikes
- Low Gate Charge (Qg): Enhances switching performance
- Package: TO-220 (through-hole mounting)
- Applications: Power supplies, motor control, DC-DC converters
It offers high current handling with minimal conduction losses, making it suitable for high-power switching.

Manufacturer

The STP110N10F7 is a N-channel MOSFET manufactured by STMicroelectronics.
STMicroelectronics is a multinational semiconductor company headquartered in Switzerland. It designs and produces a wide range of integrated circuits (ICs), power devices, and sensors for automotive, industrial, and consumer electronics. Known for innovation in energy-efficient and high-performance solutions, STMicroelectronics is a key player in the semiconductor industry.
The STP110N10F7 is part of their power MOSFET lineup, optimized for high-current, low-voltage applications such as motor control and power supplies.

Application

The STP110N10F7 is a 100V N-channel MOSFET with low on-resistance (RDS(on)) and high current capability (110A). Its key application areas include:
1. Power Supplies – Used in DC-DC converters and SMPS for efficient power switching.
2. Motor Control – Drives motors in automotive, industrial, and robotics applications.
3. Battery Management – Protects and controls high-current battery systems (e.g., EVs, energy storage).
4. Inverters – Supports solar inverters and UPS systems for energy conversion.
5. Load Switching – Manages high-power loads in industrial and automotive systems.
Its low conduction losses and high efficiency make it ideal for high-power switching applications.

Package

The STP110N10F7 is a N-channel MOSFET in a TO-220 package. This through-hole package is widely used for power applications, offering good thermal performance and ease of mounting on PCBs. It has three leads (Gate, Drain, Source) and is suitable for high-current, high-voltage switching. The TO-220 package also allows for heatsink attachment for better heat dissipation.

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