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STP140N6F7
+БОМMOSFET N-CH 60V 80A TO220
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ПроизводительSTМикроэлектроника
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Мфр. Часть #STP140N6F7
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В наличии4668
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Series | STripFET™ |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 80A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 3.5mOhm @ 40A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 55 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 3100 pF @ 10 V |
| PowerDissipation(Max) | 158W (Tc) |
| OperatingTemperature | 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
| Package/Case | TO-220-3 |
| BaseProductNumber | STP140 |
Обзор
Description
The STP140N6F7 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of up to 140A, making it suitable for high-voltage and high-current applications, such as power supplies, motor drives, and automotive systems.
With a low on-resistance (R_DS(on)), the STP140N6F7 offers efficient operation with reduced power losses, which is critical for enhancing system efficiency and thermal management. The device also has a fast switching speed, allowing for improved performance in high-frequency applications.
The MOSFET is packaged in a TO-220 format, facilitating easy heat dissipation and mounting on heatsinks. Its robust design and reliability make it a popular choice among engineers and designers in various electronic applications. Overall, the STP140N6F7 is a versatile component that balances performance and efficiency for modern power electronics.
With a low on-resistance (R_DS(on)), the STP140N6F7 offers efficient operation with reduced power losses, which is critical for enhancing system efficiency and thermal management. The device also has a fast switching speed, allowing for improved performance in high-frequency applications.
The MOSFET is packaged in a TO-220 format, facilitating easy heat dissipation and mounting on heatsinks. Its robust design and reliability make it a popular choice among engineers and designers in various electronic applications. Overall, the STP140N6F7 is a versatile component that balances performance and efficiency for modern power electronics.
Equivalent
The STP140N6F7 is an N-channel MOSFET known for its low on-resistance and high current handling. Equivalent products include:
1. IRF140N
2. FQP140N
3. NTD5866N
4. BSS140
Always verify specifications like voltage, current, and R_ds(on) to ensure compatibility in your application.
1. IRF140N
2. FQP140N
3. NTD5866N
4. BSS140
Always verify specifications like voltage, current, and R_ds(on) to ensure compatibility in your application.
Features
The STP140N6F7 is an N-channel power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It can handle a drain-source voltage (Vds) of up to 60V, making it suitable for various power applications.
2. Current Rating: It supports a continuous drain current (Id) of 140A, allowing it to drive high loads.
3. Low RDS(on): The on-resistance is typically around 6.5 mΩ, which minimizes conduction losses and enhances efficiency.
4. Fast Switching: It offers fast switching capabilities, beneficial for high-frequency applications.
5. Thermal Performance: Enhanced thermal resistance ensures stable operation under high temperatures, with a maximum junction temperature of 175°C.
6. Package: Available in an TO-220 package, facilitating easy heat dissipation and mounting.
7. Applications: Ideal for automotive, power supply, and motor control applications.
These features make the STP140N6F7 a versatile choice for power management and control in demanding environments.
1. Voltage Rating: It can handle a drain-source voltage (Vds) of up to 60V, making it suitable for various power applications.
2. Current Rating: It supports a continuous drain current (Id) of 140A, allowing it to drive high loads.
3. Low RDS(on): The on-resistance is typically around 6.5 mΩ, which minimizes conduction losses and enhances efficiency.
4. Fast Switching: It offers fast switching capabilities, beneficial for high-frequency applications.
5. Thermal Performance: Enhanced thermal resistance ensures stable operation under high temperatures, with a maximum junction temperature of 175°C.
6. Package: Available in an TO-220 package, facilitating easy heat dissipation and mounting.
7. Applications: Ideal for automotive, power supply, and motor control applications.
These features make the STP140N6F7 a versatile choice for power management and control in demanding environments.
Pinout
The STP140N6F7 is an N-channel MOSFET with a total of 3 pins. The functions of these pins are:
1. Gate (G): This pin controls the MOSFET's state. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET when it is turned on.
3. Source (S): This pin is where the current exits the MOSFET when it is turned on.
The STP140N6F7 is designed for high-speed switching and high-efficiency applications, featuring low on-resistance and a high voltage rating. It is commonly used in power management, motor control, and switching applications.
1. Gate (G): This pin controls the MOSFET's state. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET when it is turned on.
3. Source (S): This pin is where the current exits the MOSFET when it is turned on.
The STP140N6F7 is designed for high-speed switching and high-efficiency applications, featuring low on-resistance and a high voltage rating. It is commonly used in power management, motor control, and switching applications.
Manufacturer
The STP140N6F7 is manufactured by STMicroelectronics, a leading global semiconductor company. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics designs and manufactures a wide range of semiconductor products used in various applications, including automotive, industrial, consumer electronics, and communication systems. The company is known for its focus on innovation and sustainability, providing advanced technology solutions that power a diverse array of devices, from everyday consumer products to complex industrial systems. STMicroelectronics plays a significant role in the development of smart technologies, contributing to advancements in the Internet of Things (IoT), power management, and microelectronics.
Application
The STP140N6F7 is a high-voltage N-channel MOSFET commonly used in various applications, including:
1. Power Supplies: As a switch in DC-DC converters and power management circuits.
2. Motor Control: In driving and controlling electric motors in industrial and consumer applications.
3. Automotive: For power distribution and control in electric vehicles and automotive electronics.
4. Switching Regulators: In efficient voltage regulation and conversion tasks.
5. Lighting: In LED drivers and lighting control systems.
Its ability to handle high currents and voltages makes it suitable for these areas, ensuring efficiency and reliability.
1. Power Supplies: As a switch in DC-DC converters and power management circuits.
2. Motor Control: In driving and controlling electric motors in industrial and consumer applications.
3. Automotive: For power distribution and control in electric vehicles and automotive electronics.
4. Switching Regulators: In efficient voltage regulation and conversion tasks.
5. Lighting: In LED drivers and lighting control systems.
Its ability to handle high currents and voltages makes it suitable for these areas, ensuring efficiency and reliability.
Package
The STP140N6F7 transistor is typically available in a TO-220 package type. This package features a metal tab for heat dissipation and is designed for high-power applications.
