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STW31N65M5
+БОМMOSFET N-CH 650V 22A TO247
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ПроизводительSTМикроэлектроника
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Мфр. Часть #STW31N65M5
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Лист данных STW31N65M5 DataSheet
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Пакет TO-247
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В наличии2714
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package | Tube |
| Series | MDmesh™ V |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 22A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 148mOhm @ 11A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 45 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 816 pF @ 100 V |
| PowerDissipation(Max) | 150W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
Обзор
Description
Key features include a breakdown voltage of 650V, a continuous drain current of 31A at 25°C, and a low on-resistance (R_DS(on)) of approximately 0.08 ohms. Its structure is designed to provide an optimal balance between performance and robustness, with fast switching capabilities and reduced gate charge, resulting in lower energy consumption during operation.
The device is housed in a TO-247 package, which allows for effective heat dissipation, making it suitable for high-power applications. The STW31N65M5 combines advanced technology with reliability, offering a versatile solution for designers seeking efficient power management components.
Equivalent
1. Infineon IPA60R190P6
2. ON Semiconductor FDPF35N60
3. Vishay SiHG31N60E
4. Toshiba TK31N60X
These alternatives offer similar voltage and current ratings, but it's essential to check specific parameters and thermal characteristics to ensure compatibility for your application.
Features
1. Voltage Rating: It has a drain-source voltage (V_ds) rating of 650V.
2. Current Rating: The continuous drain current (I_d) can reach up to 31A.
3. R_DS(on): It features a low on-resistance, which helps in reducing conduction losses.
4. Fast Switching: The device is optimized for high-speed operation, making it suitable for applications requiring quick transitions.
5. Gate Charge: It has a low gate charge, which contributes to reduced driving losses and improved overall efficiency.
6. Package: Typically available in a TO-247 package, which supports efficient thermal management.
7. Applications: Suitable for use in power supplies, converters, and any applications needing efficient power management with high-voltage requirements.
Overall, the STW31N65M5 is designed for applications that demand high efficiency, reliability, and compactness.
Pinout
1. Gate (G): This pin is used to trigger the MOSFET, allowing it to switch on or off. It controls the flow of current between the drain and source.
2. Drain (D): This pin is connected to the high voltage side of the circuit. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S): This pin is connected to the low voltage side of the circuit and is the exit point for current flowing through the MOSFET when it is turned on.
The STW31N65M5 is designed for high-efficiency power switching applications and is part of the MDmesh™ M5 series, known for its low on-state resistance and high-speed switching.
Manufacturer
Application
1. Power Supplies: Used in switch-mode power supplies (SMPS) for computers, industrial equipment, and consumer electronics.
2. Inverters: Suitable for photovoltaic inverters and motor drive inverters.
3. Motor Control: Employed in DC-AC and AC-DC converters for motor control systems.
4. Telecommunications: Utilized in telecom power infrastructure for improving efficiency.
5. Automotive: Applied in automotive electronics for power management and conversion systems.
6. Lighting: Used in LED drivers and electronic ballasts.
These applications benefit from the MOSFET's low on-resistance and high efficiency.