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STW33N60DM2
+БОМMOSFET N-CH 600V 24A TO247
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ПроизводительSTМикроэлектроника
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Мфр. Часть #STW33N60DM2
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Лист данных STW33N60DM2 DataSheet
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В наличии17357
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | MDmesh™ DM2 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 24A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 130mOhm @ 12A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 43 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 1870 pF @ 100 V |
| PowerDissipation(Max) | 190W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
Обзор
Description
Key specifications include a breakdown voltage of 600V, continuous drain current of 33A, and low gate charge, which contributes to reducing overall power loss during operation. The device is housed in a TO-247 package, which offers good thermal performance and is suitable for applications requiring higher power handling.
The STW33N60DM2's design focuses on improving diode recovery characteristics, enhancing efficiency in soft-switching and resonant-mode applications. Its robust design and high-voltage operation make it suitable for demanding environments, providing reliability and long-term performance. Overall, this MOSFET is a versatile component for engineers looking to optimize energy efficiency and performance in electronic designs.
Equivalent
1. Infineon IPW60R033P6: 600V, 33A N-channel MOSFET.
2. ON Semiconductor FDPF52N60: 600V, 50A N-channel MOSFET.
3. Vishay IRFBG30: 600V, 33A N-channel MOSFET.
Ensure to check the datasheets for differences in parameters like Rds(on), gate charge, and package type before substituting.
Features
1. Voltage and Current Ratings: It has a maximum drain-source voltage (V_DS) of 600V and a drain current (I_D) of 33A.
2. R_DS(on): The on-resistance is very low, enhancing its efficiency by reducing power loss during operation.
3. Technology: It utilizes MDmesh DM2 technology, which optimizes the device for better performance in hard-switching applications like power supplies and converters.
4. Fast Switching: The device is capable of fast switching, improving efficiency in power conversion and reducing electromagnetic interference.
5. Thermal Resistance: It features low thermal resistance, allowing for effective heat dissipation and reliable operation under high power conditions.
6. Package: The MOSFET is available in a TO-247 package, suitable for high-power applications that require efficient thermal management.
These features make the STW33N60DM2 suitable for applications in power systems, including solar inverters, motor drives, and industrial power supplies.
Pinout
1. Gate (G): This pin is used to turn the MOSFET on or off. A voltage applied to the gate controls the flow of current between the drain and the source.
2. Drain (D): This pin is the terminal through which current flows from the drain to the source when the MOSFET is in the 'on' state.
3. Source (S): The source pin is the terminal through which current exits the MOSFET.
The STW33N60DM2 is designed for high-voltage applications with a maximum drain-source voltage (V_ds) of 600V. It is commonly used in applications such as power supplies, converters, and motor control circuits.
Manufacturer
Application
1. Switching Power Supplies: Used in SMPS for consumer electronics and industrial applications.
2. Motor Control: Ideal for controlling DC motors in appliances and automotive systems.
3. Inverters: Utilized in solar inverters and UPS systems for efficient power conversion.
4. Lighting Systems: Suitable for LED drivers and other lighting controls.
5. Telecommunications: Employed in telecom power infrastructure for reliable performance.
6. Audio Amplifiers: Used in high-power audio systems for improved sound fidelity.
These applications benefit from the device's low on-resistance and fast switching capabilities.