STW33N60DM2

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STW33N60DM2

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MOSFET N-CH 600V 24A TO247

  • ПроизводительSTМикроэлектроника

  • Мфр. Часть #STW33N60DM2

  • Лист данных STW33N60DM2 DataSheet

  • В наличии17357

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Спецификации

Атрибут Ценность
Supplier STMicroelectronics
Package Tube
Series MDmesh™ DM2
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 24A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 130mOhm @ 12A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 43 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 1870 pF @ 100 V
PowerDissipation(Max) 190W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

Обзор

Description

The STW33N60DM2 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It belongs to the MDmesh DM2 series, which is known for features like low on-state resistance and fast-switching capabilities. This makes the STW33N60DM2 ideal for use in power conversion systems such as switch-mode power supplies (SMPS), lighting, and industrial applications.
Key specifications include a breakdown voltage of 600V, continuous drain current of 33A, and low gate charge, which contributes to reducing overall power loss during operation. The device is housed in a TO-247 package, which offers good thermal performance and is suitable for applications requiring higher power handling.
The STW33N60DM2's design focuses on improving diode recovery characteristics, enhancing efficiency in soft-switching and resonant-mode applications. Its robust design and high-voltage operation make it suitable for demanding environments, providing reliability and long-term performance. Overall, this MOSFET is a versatile component for engineers looking to optimize energy efficiency and performance in electronic designs.

Equivalent

The STW33N60DM2 is a 600V, 33A N-channel MOSFET from STMicroelectronics. Equivalent products from other manufacturers include:
1. Infineon IPW60R033P6: 600V, 33A N-channel MOSFET.
2. ON Semiconductor FDPF52N60: 600V, 50A N-channel MOSFET.
3. Vishay IRFBG30: 600V, 33A N-channel MOSFET.
Ensure to check the datasheets for differences in parameters like Rds(on), gate charge, and package type before substituting.

Features

The STW33N60DM2 is a power MOSFET designed for high-efficiency power applications. Here are its key features:
1. Voltage and Current Ratings: It has a maximum drain-source voltage (V_DS) of 600V and a drain current (I_D) of 33A.
2. R_DS(on): The on-resistance is very low, enhancing its efficiency by reducing power loss during operation.
3. Technology: It utilizes MDmesh DM2 technology, which optimizes the device for better performance in hard-switching applications like power supplies and converters.
4. Fast Switching: The device is capable of fast switching, improving efficiency in power conversion and reducing electromagnetic interference.
5. Thermal Resistance: It features low thermal resistance, allowing for effective heat dissipation and reliable operation under high power conditions.
6. Package: The MOSFET is available in a TO-247 package, suitable for high-power applications that require efficient thermal management.
These features make the STW33N60DM2 suitable for applications in power systems, including solar inverters, motor drives, and industrial power supplies.

Pinout

The STW33N60DM2 is a power MOSFET transistor, manufactured by STMicroelectronics, designed for high-efficiency switching applications. It is part of the MDmesh DM2 series. This particular model is housed in a TO-247 package, which typically features 3 pins. The three pins are as follows:
1. Gate (G): This pin is used to turn the MOSFET on or off. A voltage applied to the gate controls the flow of current between the drain and the source.
2. Drain (D): This pin is the terminal through which current flows from the drain to the source when the MOSFET is in the 'on' state.
3. Source (S): The source pin is the terminal through which current exits the MOSFET.
The STW33N60DM2 is designed for high-voltage applications with a maximum drain-source voltage (V_ds) of 600V. It is commonly used in applications such as power supplies, converters, and motor control circuits.

Manufacturer

The STW33N60DM2 is manufactured by STMicroelectronics, a multinational electronics and semiconductor company. STMicroelectronics is one of the world's leading semiconductor companies, offering a wide range of products, including microcontrollers, sensors, analog devices, and power management components. The company serves various industries such as automotive, industrial, personal electronics, and communications. Known for its innovation and research and development efforts, STMicroelectronics plays a significant role in driving technological advancements and providing solutions for electronic systems.

Application

The STW33N60DM2 is a power MOSFET designed for high-efficiency applications. Its primary application areas include:
1. Switching Power Supplies: Used in SMPS for consumer electronics and industrial applications.
2. Motor Control: Ideal for controlling DC motors in appliances and automotive systems.
3. Inverters: Utilized in solar inverters and UPS systems for efficient power conversion.
4. Lighting Systems: Suitable for LED drivers and other lighting controls.
5. Telecommunications: Employed in telecom power infrastructure for reliable performance.
6. Audio Amplifiers: Used in high-power audio systems for improved sound fidelity.
These applications benefit from the device's low on-resistance and fast switching capabilities.

Package

The STW33N60DM2 is typically available in a TO-247 package.

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