Спецификации
| Атрибут | Ценность |
| Supplier | Microchip Technology |
| Package / Case | Bulk |
| Part Status | Obsolete |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown(Max) | 65V |
| Frequency - Transition | 1.03GHz |
| Gain | 10.2dBd |
| Power - Max | 2095W |
| DC Current Gain(h FE)(Min) @ Ic Vce | 20 @ 1A, 5V |
| Current - Collector(Ic)(Max) | 60A |
| Operating Temperature | 200°C (TJ) |
| Mounting Type | Chassis Mount |
