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Спецификации
| Атрибут | Ценность |
| Supplier | Toshiba Semiconductor and Storage |
| Package / Case | Tape & Reel (TR) |
| Part Status | Active |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain(Id) @ 25°C | 6.1A, 5.3A |
| Rds On(Max) @ Id Vgs | 32mOhm @ 3.1A, 10V |
| Vgs(th)(Max) @ Id | 2.3V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 24nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 850pF @ 10V |
| Power - Max | 450mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
