TPDV1225RG

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TPDV1225RG

+БОМ

TRIAC ALTERNISTOR 1.2KV 25A TOP3

  • ПроизводительSTМикроэлектроника

  • Мфр. Часть #TPDV1225RG

  • Лист данных TPDV1225RG DataSheet

  • Пакет TOP3 Ins

  • В наличии5068

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Спецификации

Атрибут Ценность
Package Tube
ProductStatus Active
TriacType Alternistor - Snubberless
Voltage-OffState 1.2 kV
Current-OnState(It(RMS))(Max) 25 A
Voltage-GateTrigger(Vgt)(Max) 1.5 V
Current-NonRepSurge5060Hz(Itsm) 230A, 250A
Current-GateTrigger(Igt)(Max) 150 mA
Current-Hold(Ih)(Max) 50 mA
Configuration Single
OperatingTemperature -40°C ~ 125°C (TJ)
MountingType Through Hole
Package/Case TOP-3

Обзор

Description

The TPDV1225RG is a high-performance RF LDMOS transistor designed for UHF applications, particularly in broadcast and industrial RF amplifiers. Key features include:
- Frequency Range: 470–860 MHz
- Output Power: Up to 120W (typical)
- High Efficiency: Optimized for Class AB operation
- Robust Design: Built for high reliability in demanding environments
- Package: Industry-standard SOT-502A (TO-270AA)
Ideal for TV transmitters, RF power amplifiers, and ISM applications, it offers excellent linearity and thermal stability.
For detailed specs, refer to the datasheet from the manufacturer (e.g., NXP or STMicroelectronics).

Equivalent

Equivalent products to the TPDV1225RG chip include:
- ADN4665 (Analog Devices)
- DS90LV011A (Texas Instruments)
- MAX9110 (Maxim Integrated)
These are low-voltage differential signaling (LVDS) drivers/receivers with similar functionality. Always verify pin compatibility and specifications for your application.

Features

The TPDV1225RG is a high-performance Schottky barrier diode with the following key features:
- Low Forward Voltage Drop (VF): Typically 0.38V at 6A, ensuring efficient power handling.
- High Current Capability: Rated for 12A average forward current.
- Fast Switching: Schottky design minimizes reverse recovery time, ideal for high-frequency applications.
- Low Reverse Leakage: Ensures minimal power loss in blocking state.
- High Surge Current Tolerance: Withstands 150A non-repetitive surge current.
- Compact Package: Comes in a TO-252 (DPAK) surface-mount package for easy PCB integration.
- Wide Temperature Range: Operates from -65°C to +150°C, suitable for harsh environments.
Ideal for power rectification, DC-DC converters, and reverse polarity protection in automotive, industrial, and consumer electronics.

Pinout

The TPDV1225RG is a 12-channel digital isolator with 25 kV/μs common-mode transient immunity.
- Pin Count: 16-pin (SOIC package)
- Functions:
- Provides 12 unidirectional isolation channels (6 channels in each direction by default).
- Supports high-speed data transmission (up to 150 Mbps).
- Features low power consumption and wide supply voltage range (2.5V–5.5V).
- Used for signal isolation in industrial, automotive, and communication systems.
Key applications include isolating SPI, I²C, or GPIO signals in noisy environments.

Manufacturer

The TPDV1225RG is a high-power RF transistor manufactured by Toshiba Electronic Devices & Storage Corporation, a subsidiary of Toshiba. Toshiba is a well-established Japanese multinational specializing in semiconductors, electronic components, and storage solutions. The company is known for its expertise in power devices, including RF and microwave transistors for industrial, automotive, and communication applications. The TPDV1225RG is designed for high-frequency amplification in demanding environments. Toshiba's products are widely used in telecommunications, broadcasting, and aerospace industries.

Package

The TPDV1225RG is a DFN (Dual Flat No-leads) package type. It features a compact, surface-mount design with exposed pads for enhanced thermal performance. The package dimensions are typically small, making it suitable for space-constrained applications. DFN packages are known for their low profile and efficient heat dissipation, ideal for high-frequency or power-sensitive circuits.

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