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Спецификации
| Атрибут | Ценность |
| Supplier | Toshiba Semiconductor and Storage |
| Package / Case | Tube |
| Part Status | Active |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified(Io)(per Diode) | 12A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 12 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
| Operating Temperature - Junction | 175°C |
| Mounting Type | Through Hole |
