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UCC27211DRMR
+БОМIC GATE DRVR HALF-BRIDGE 8VSON
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ПроизводительТехасские инструменты
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Мфр. Часть #UCC27211DRMR
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Пакет VSON (DRM)-8
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В наличии7796
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package | Tape & Reel (TR) |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | N-Channel MOSFET |
| Voltage-Supply | 8V ~ 17V |
| LogicVoltage-VILVIH | 1.3V, 2.7V |
| Current-PeakOutput(SourceSink) | 4A, 4A |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 120 V |
| Rise/FallTime(Typ) | 7.2ns, 5.5ns |
| OperatingTemperature | -40°C ~ 140°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-VDFN Exposed Pad |
Обзор
Description
This driver features high peak output currents and is designed to minimize switching losses, making it suitable for both synchronous and asynchronous rectification applications. The UCC27211DRMR is housed in a thermally enhanced, small outline package with a wide temperature range, enhancing its reliability in demanding environments. Additionally, it provides under-voltage lockout protection and an interlock feature to prevent shoot-through. Overall, the UCC27211DRMR is ideal for applications requiring efficient and reliable high-speed switching.
Equivalent
1. IR2110 by Infineon Technologies
2. FAN7392 by ON Semiconductor
3. ADuM3223 by Analog Devices
4. TLP250 by Toshiba
5. MIC4427 by Microchip Technology
These alternatives offer similar features and functionality but verify specifications and compatibility for your specific application needs.
Features
1. High Voltage Capability: It supports a maximum supply voltage of up to 120V, making it suitable for a variety of power management applications.
2. Fast Switching: The device offers fast rise and fall times, enhancing efficiency and performance in high-speed applications.
3. High Peak Current: Capable of delivering high peak output currents, which are essential for driving large MOSFETs effectively.
4. Bootstrap Diode: An integrated bootstrap diode simplifies the design by reducing the need for external components.
5. UVLO Protection: Undervoltage lockout (UVLO) ensures reliable operation by preventing the MOSFETs from operating under low-voltage conditions.
6. Small Package: Available in a compact, thermally efficient package, which is beneficial for space-constrained designs.
These features make the UCC27211DRMR suitable for automotive, industrial, and consumer applications where efficient and reliable switching is critical.
Pinout
1. HB (Pin 1): High-side bootstrap supply. This pin is used to provide power to the high-side driver.
2. HO (Pin 2): High-side output. Connects to the gate of the high-side MOSFET.
3. HS (Pin 3): High-side source connection. Connects to the source of the high-side MOSFET and the negative terminal of the bootstrap capacitor.
4. HI (Pin 4): High-side input. Controls the high-side driver.
5. VDD (Pin 5): Supply voltage for internal logic and low-side driver.
6. LI (Pin 6): Low-side input. Controls the low-side driver.
7. DIS (Pin 7): Disable pin. Used to disable the driver outputs.
8. LO (Pin 8): Low-side output. Connects to the gate of the low-side MOSFET.
9. VSS (Pin 9): Ground reference for the IC.
10. NC (Pin 10): No connection. Typically not connected to the circuit.
This IC is commonly used in applications requiring fast switching of power MOSFETs, such as DC/DC converters and motor drives.
Manufacturer
Application
1. DC-DC Converters: Used in power supply systems for efficient energy conversion.
2. Motor Drives: Suitable for driving motors in industrial and automotive applications.
3. Switch-Mode Power Supplies (SMPS): Enhances efficiency and performance in power converters.
4. Solar Inverters: Utilized in renewable energy systems for power optimization.
5. Uninterruptible Power Supplies (UPS): Ensures reliable power management and distribution.
6. Telecom Power Systems: Assists in managing power in telecommunication infrastructure.
Its high-speed operation and ability to drive high-side and low-side MOSFETs make it versatile for various power management applications.