VNP35N07-E

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VNP35N07-E

+БОМ

IC PWR DRIVER N-CHAN 1:1 TO220AB

  • ПроизводительSTМикроэлектроника

  • Мфр. Часть #VNP35N07-E

  • Лист данных VNP35N07-E DataSheet

  • В наличии4826

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Series OMNIFET™, VIPower™
Part Status Active
Base Product Number VNP35N
Switch Type General Purpose
Number of Outputs 1
Ratio - Input:Output 1:1
Output Configuration Low Side
Output Type N-Channel
Interface On/Off
Voltage - Load 55V (Max)
Voltage - Supply (Vcc/Vdd) Not Required
Current - Output (Max) 25A
Rds On (Typ) 280mOhm (Max)
Input Type Non-Inverting
Features Status Flag
Fault Protection Current Limiting (Fixed), Over Temperature, Over Voltage
Mounting Type Through Hole
Supplier Device Package TO-220
Package TO-220-3
Packaging Tube

Обзор

Description

VNP35N07-E is a data product derived from the Visible Infrared Imaging Radiometer Suite (VIIRS) instrument aboard the Suomi National Polar-orbiting Partnership (Suomi NPP) satellite. This specific product focuses on providing information related to snow and ice cover, particularly emphasizing the presence and characteristics of snow cover across various geographic regions.
The "E" in VNP35N07-E indicates that this product is tailored for regional or environmental monitoring, which can be crucial for climate studies, hydrological modeling, and understanding ecosystem dynamics. VIIRS instruments utilize multiple spectral bands to accurately detect snow cover, even in areas where it might be obscured by clouds or vegetation.
Such data products are invaluable for researchers and policymakers as they provide critical insights into changes in the Earth's cryosphere. They support a wide range of applications, from assessing water resources to monitoring environmental changes due to climate variability. The VNP35N07-E data are part of a broader effort to improve our understanding of Earth system processes through satellite-based remote sensing.

Equivalent

The VNP35N07-E is a power MOSFET from STMicroelectronics. Equivalent products might include similar N-channel MOSFETs from other manufacturers with comparable voltage, current, and RDS(on) ratings. Possible alternatives include:
1. IRFZ44N from International Rectifier (now Infineon Technologies)
2. FQP30N06 from ON Semiconductor
3. NTP5867NL from ON Semiconductor
Always verify the specifications and datasheet to ensure compatibility with your specific application.

Features

The VNP35N07-E is an N-channel MOSFET transistor featuring the following key characteristics:
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 70V and a continuous drain current (I_D) of 30A, suitable for various power applications.
2. Low On-Resistance: The device offers low on-resistance, which minimizes power loss and enhances efficiency in switching operations.
3. Ruggedness and Durability: Its robust design ensures reliability under high-stress conditions, making it suitable for demanding environments.
4. Fast Switching: The VNP35N07-E provides fast switching speeds, which improves performance in high-frequency applications.
5. Thermal Management: Equipped with efficient heat dissipation capabilities, it supports high thermal stability, essential for maintaining performance over extended periods.
6. Applications: This MOSFET is widely used in automotive systems, power management, and other electronic switching applications due to its reliable performance.
7. Package Type: Typically available in a TO-220 package, which facilitates easy mounting and integration into existing systems.
These features make the VNP35N07-E a versatile component for various electronic applications requiring efficient power handling and fast-switching capabilities.

Pinout

The VNP35N07-E is a power MOSFET with the following characteristics:
- Pin Count: It typically comes in a TO-220 package which has 3 pins.
- Pin Functions:
- Pin 1 (Gate): This pin is used to turn the MOSFET on or off by applying the appropriate voltage.
- Pin 2 (Drain): This pin is connected to the load and is where the main current flows out when the MOSFET is on.
- Pin 3 (Source): This is the pin connected to the ground reference or the negative side of the load circuit.
This MOSFET is designed for use in automotive applications to switch loads and is capable of handling high currents and voltages. It provides functions such as efficient energy management and protection features.

Manufacturer

The VNP35N07-E is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a broad range of semiconductor products. These products are used in various applications, including automotive, industrial, personal electronics, computers, and communications equipment. The company is known for its expertise in areas such as embedded processing solutions, analog and power management, MEMS (Micro-Electro-Mechanical Systems), and sensors. STMicroelectronics operates as a publicly traded company and is recognized as one of the leading players in the semiconductor industry.

Application

VNP35N07-E is a data product from NASA's VIIRS (Visible Infrared Imaging Radiometer Suite) instrument, specifically focusing on snow cover and albedo. Its application areas include:
1. Climatology: Studying long-term snow cover trends and climate change impacts.
2. Hydrology: Assessing snowmelt contribution to river flows and water resources management.
3. Weather Forecasting: Improving models by incorporating accurate snow cover data.
4. Ecology: Monitoring ecosystems dependent on snow cover.
5. Agriculture: Planning in regions where snowpack influences growing seasons.
6. Disaster Management: Assessing risks related to snowmelt-induced floods.
These applications support researchers, policymakers, and land managers in making informed decisions.

Package

The package type VNP35N07-E refers to a power MOSFET in a TO-252 (DPAK) package. This package type is commonly used for surface mount technology in electronic devices, offering low thermal resistance and efficient heat dissipation.

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