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Спецификации
| Атрибут | Ценность |
| Supplier | Vishay General Semiconductor - Diodes Division |
| Package / Case | Tube |
| Part Status | Active |
| Diode Configuration | 2 Independent |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Current - Average Rectified(Io)(per Diode) | 250A |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 200 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 54 ns |
| Current - Reverse Leakage @ Vr | 90 µA @ 200 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Chassis Mount |
