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ZXMN10A08E6TA
+БОМMOSFET N-CH 100V 1.5A SOT26
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ПроизводительВключенные диоды
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Мфр. Часть #ZXMN10A08E6TA
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В наличии7788
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
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Спецификации
| Атрибут | Ценность |
| Supplier | Diodes Incorporated |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 1.5A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 250mOhm @ 3.2A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 7.7 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 405 pF @ 50 V |
| Power Dissipation (Max) | 1.1W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-26 |
Обзор
Description
Key specs (typical):
- Vds: around 60 V
- Id: about 10 A
- Rds(on): ~0.08 Ω (typ) at Vgs = 4.5 V; max ~0.095 Ω
- Gate threshold: ~1.5–3 V
- Vgs rating: ±8 V
Package: a surface-mount power package (exact code depends on the specific datasheet). Gate drive is compatible with logic- or near-logic-level signals.
Common uses:
- Low- to medium-current switching in power supplies
- High-side/low-side switching in motor controllers
- General purpose load switching in compact, efficient designs
Note: Always verify the exact package, max ratings, and thermal data from the official datasheet for your application.
Features
- Vds = 80 V, Id = 10 A
- Low on-resistance: ~9–12 mΩ typical at Vgs = 4.5 V (max ~15 mΩ)
- Logic-level gate drive: fully on at around 4.5 V (operates down to ~2.5–3 V)
- Fast switching with low gate charge
- Robust device structure with intrinsic body diode
- Package: DPAK (TO-252) surface-mount; Tape & Reel (TA) option
- Pb-free, RoHS compliant
- Suitable for high-side/low-side switching, DC-DC converters, motor drivers, and general power-switching applications
Pinout
- Function: N-channel enhancement-mode MOSFET (gate–drain–source). Used as a switch or amplifier; conduction between drain and source is controlled by the gate voltage.
Manufacturer
- Company type: A global semiconductor company that designs and manufactures discrete and analog components (diodes, MOSFETs, transistors, etc.), headquartered in the United States.
Application
- Power switching in switch-mode power supplies and DC-DC converters (buck/boost)
- Low-side switching for DC motors, stepper motors, solenoids, and actuators
- Automotive and industrial power electronics (load switches, protection)
- Solar/battery management circuits (charger/discharger controllers, MPPT help)
- General high-current switching in power stages of consumer electronics