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ZXMN3A01ZTA
+БОМMOSFET N-CH 30V 2.2A SOT89
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ПроизводительВключенные диоды
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Мфр. Часть #ZXMN3A01ZTA
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Лист данных ZXMN3A01ZTA DataSheet
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В наличии27124
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | Diodes Incorporated |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 2.2A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 120mOhm @ 2.5A, 10V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 5 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 186 pF @ 25 V |
| Power Dissipation (Max) | 970mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-89-3 |
Обзор
Description
ZXMN3A01ZTA is a specific part number for a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Diodes Incorporated. This particular component is a type of N-channel enhancement mode field-effect transistor, which is commonly used in electronic circuits for switching and amplification purposes.
The ZXMN3A01ZTA is designed to handle low to medium power levels, making it suitable for a variety of applications such as power management systems, DC-DC converters, motor drives, and load switches. It is known for its efficiency, low on-resistance, and fast switching speed, which are important characteristics in minimizing power loss and improving performance in electronic applications.
This MOSFET is housed in a compact SOT-23 package, which is suitable for surface-mounting on printed circuit boards (PCBs), allowing for flexible and space-efficient designs. Its characteristics and reliability make it a popular choice among engineers and designers for both consumer electronics and industrial applications. Always refer to the manufacturer's datasheet for detailed specifications and recommended usage guidelines.
The ZXMN3A01ZTA is designed to handle low to medium power levels, making it suitable for a variety of applications such as power management systems, DC-DC converters, motor drives, and load switches. It is known for its efficiency, low on-resistance, and fast switching speed, which are important characteristics in minimizing power loss and improving performance in electronic applications.
This MOSFET is housed in a compact SOT-23 package, which is suitable for surface-mounting on printed circuit boards (PCBs), allowing for flexible and space-efficient designs. Its characteristics and reliability make it a popular choice among engineers and designers for both consumer electronics and industrial applications. Always refer to the manufacturer's datasheet for detailed specifications and recommended usage guidelines.
Equivalent
The ZXMN3A01ZTA is a MOSFET used for switching applications. Equivalent products might include the IRLML2502 from Infineon Technologies, the BSS138 from ON Semiconductor, and the Si2312DS from Vishay. It's important to compare specific parameters such as voltage, current ratings, and package type to ensure compatibility for your application. Always verify with datasheets to ensure that the equivalents meet the necessary requirements for your specific use case.
Features
The ZXMN3A01ZTA is an N-channel MOSFET designed for various electronic applications. Key features include:
1. Low On-Resistance: The MOSFET offers low on-resistance, enhancing efficiency by reducing power loss during operation.
2. High-Speed Switching: It supports high-speed switching, which is crucial for applications requiring rapid on/off cycles.
3. Compact Package: The device is available in a compact SOT-23 package, making it suitable for space-constrained applications.
4. Logic Level Gate Drive: It is designed to be driven by logic-level signals, facilitating easy integration with microcontrollers and digital circuits.
5. Low Gate Charge: A low gate charge means that less current is needed to switch the device on and off, contributing to efficient power management.
6. Robust Design: The MOSFET is built to withstand significant voltage and current, ensuring reliability in demanding conditions.
These features make the ZXMN3A01ZTA suitable for use in power management, load switching, and other applications where efficient and reliable switching is required.
1. Low On-Resistance: The MOSFET offers low on-resistance, enhancing efficiency by reducing power loss during operation.
2. High-Speed Switching: It supports high-speed switching, which is crucial for applications requiring rapid on/off cycles.
3. Compact Package: The device is available in a compact SOT-23 package, making it suitable for space-constrained applications.
4. Logic Level Gate Drive: It is designed to be driven by logic-level signals, facilitating easy integration with microcontrollers and digital circuits.
5. Low Gate Charge: A low gate charge means that less current is needed to switch the device on and off, contributing to efficient power management.
6. Robust Design: The MOSFET is built to withstand significant voltage and current, ensuring reliability in demanding conditions.
These features make the ZXMN3A01ZTA suitable for use in power management, load switching, and other applications where efficient and reliable switching is required.
Pinout
The ZXMN3A01ZTA is an N-channel enhancement mode MOSFET. It typically comes in a standard SOT-23 package, which generally has 3 pins. The pin functions for the ZXMN3A01ZTA are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying the appropriate voltage to the gate switches the device on and off.
2. Drain (D): This is the main current-carrying terminal when the MOSFET is active. The drain is connected to the load in most applications.
3. Source (S): This terminal is typically connected to ground in N-channel MOSFET applications. It acts as the reference point for the device.
These pins are used to control power flow in electronic circuits, making the ZXMN3A01ZTA suitable for switching applications.
1. Gate (G): This pin is used to control the MOSFET. Applying the appropriate voltage to the gate switches the device on and off.
2. Drain (D): This is the main current-carrying terminal when the MOSFET is active. The drain is connected to the load in most applications.
3. Source (S): This terminal is typically connected to ground in N-channel MOSFET applications. It acts as the reference point for the device.
These pins are used to control power flow in electronic circuits, making the ZXMN3A01ZTA suitable for switching applications.
Manufacturer
The ZXMN3A01ZTA is manufactured by Diodes Incorporated. Diodes Incorporated is a global manufacturer and supplier of semiconductor products. The company produces a wide range of electronic components, including discrete, analog, and mixed-signal products. Their offerings are used in various applications, such as automotive, consumer electronics, computing, industrial, and communications. Diodes Incorporated is known for providing efficient, reliable, and high-performance solutions to meet the needs of these sectors.
Application
The ZXMN3A01ZTA is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). Its application areas include power management circuits, DC-DC converters, load switching, and motor drive circuits. It is commonly used in consumer electronics, automotive systems, and industrial applications for efficient power switching and voltage regulation. Its low on-resistance and high-speed switching capabilities make it suitable for improving energy efficiency and reducing power loss in a wide range of electronic devices.
Package
The ZXMN3A01ZTA is a N-channel MOSFET transistor packaged in a SOT-23 format. The SOT-23 package is a small, surface-mounted device that is ideal for space-constrained applications, providing efficient electrical performance and thermal management.
