ZXMN6A07FTA

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ZXMN6A07FTA

+БОМ

MOSFET N-CH 60V 1.2A SOT23-3

  • ПроизводительВключенные диоды

  • Мфр. Часть #ZXMN6A07FTA

  • Лист данных ZXMN6A07FTA DataSheet

  • Пакет SOT23-3

  • В наличии7152

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Спецификации

Атрибут Ценность
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 1.2A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 250mOhm @ 1.8A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 3.2 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 166 pF @ 40 V
PowerDissipation(Max) 625mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3

Обзор

Description

The ZXMN6A07FTA is an N-channel enhancement-mode MOSFET from Diodes Incorporated, designed for low-voltage, high-efficiency switching applications. Key features include:
- Voltage Rating: 60V drain-to-source (VDSS).
- Current Capacity: 6.3A continuous drain current (ID).
- Low On-Resistance: 85mΩ (max) at 10V gate drive (RDS(on)), minimizing conduction losses.
- Fast Switching: Optimized for high-speed applications like power management, load switching, or motor control.
- Package: SOT-23, compact and suitable for space-constrained designs.
Ideal for battery-powered devices, DC-DC converters, and portable electronics due to its low gate charge and efficient performance. Always refer to the datasheet for detailed specifications and application guidelines.

Features

The ZXMN6A07FTA is an N-channel MOSFET with the following key features:
- Voltage Rating: 60V (Drain-Source, VDS)
- Current Rating: 6.3A (Continuous Drain, ID)
- Low On-Resistance: 85mΩ (max at VGS=10V)
- Gate Threshold Voltage: 1V (min) to 2.5V (max)
- Fast Switching: Low gate charge (12nC typical)
- Package: SOT-23 (Compact surface-mount)
- Applications: Power management, load switching, DC-DC converters
It’s designed for efficiency in low-voltage circuits and offers robust performance in a small form factor.

Manufacturer

The ZXMN6A07FTA is an N-channel MOSFET manufactured by Diodes Incorporated, a global semiconductor company headquartered in Plano, Texas, USA.
Diodes Incorporated specializes in producing high-quality discrete, analog, and mixed-signal semiconductors for a wide range of applications, including power management, automotive, consumer electronics, and industrial systems. Known for cost-effective and reliable components, the company serves diverse markets with a focus on innovation and efficiency.
The ZXMN6A07FTA is a compact, low-voltage MOSFET designed for switching applications, commonly used in power supplies, motor control, and load switching.

Application

The ZXMN6A07FTA is an N-channel MOSFET commonly used in:
1. Power Management – Switching regulators, DC-DC converters.
2. Load Switching – Controlling power in portable devices.
3. Motor Control – Driving small motors in consumer electronics.
4. Battery Protection – Overcurrent/overvoltage protection circuits.
5. LED Drivers – Efficient current control for lighting systems.
Its low on-resistance (RDS(on)) and compact SOT-23 package make it ideal for space-constrained, energy-efficient applications.

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