ZXMN6A11ZTA

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ZXMN6A11ZTA

+БОМ

MOSFET N-CH 60V 2.7A SOT89-3

  • ПроизводительВключенные диоды

  • Мфр. Часть #ZXMN6A11ZTA

  • Лист данных ZXMN6A11ZTA DataSheet

  • Пакет TO-243AA

  • В наличии2347

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Спецификации

Атрибут Ценность
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 2.7A (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 120mOhm @ 2.5A, 10V
Vgs(th)(Max) @ Id 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 5.7 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 330 pF @ 40 V
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-89-3

Обзор

Description

The ZXMN6A11ZTA is an N-channel MOSFET from Diodes Incorporated, designed for low-voltage, high-efficiency switching applications. Key features include:
- Voltage Rating: 60V (Drain-Source, VDS).
- Current Capacity: 6.3A (Continuous Drain, ID).
- Low On-Resistance: 50mΩ (max at VGS = 10V), reducing power loss.
- Fast Switching: Optimized for high-speed applications (e.g., power management, DC-DC converters).
- Compact Package: SOT-23, suitable for space-constrained designs.
Ideal for battery-powered devices, load switches, and motor control, it offers reliable performance with low gate drive requirements. Check the datasheet for detailed specs and thermal considerations.

Equivalent

Equivalent products to the ZXMN6A11ZTA (N-channel MOSFET, 60V, 6.1A, SOT-23) include:
- DMN1019USN (Diodes Inc)
- BSS138 (Infineon) – lower current (0.2A) but similar package
- IRLML6402 (Infineon) – P-channel alternative
- SI2301 (Vishay)
- 2N7002 (ON Semiconductor) – lower voltage (60V vs 30V)
Check datasheets for exact specs. For direct replacements, consider ZXMN6A11FTA (same series, different package).

Features

The ZXMN6A11ZTA is an N-channel MOSFET with the following key features:
- Voltage Rating: 60V (Drain-Source, VDS)
- Current Rating: 6.3A (Continuous Drain, ID)
- Low On-Resistance: 50mΩ (max at VGS = 10V)
- Gate Threshold Voltage: 1V (min) to 2.5V (max)
- Fast Switching: Low gate charge (12nC) and fast switching times
- Power Dissipation: 2.5W (max)
- Package: SOT-23 (Compact surface-mount)
- Applications: Power management, load switching, DC-DC converters
It’s designed for efficiency in low-voltage, high-speed switching circuits.

Application

The ZXMN6A11ZTA is an N-channel MOSFET commonly used in:
1. Power Management – Switching regulators, DC-DC converters.
2. Load Switching – Battery protection, power distribution.
3. Motor Control – Small motor drivers, robotics.
4. LED Drivers – Efficient lighting control.
5. Portable Devices – Smartphones, tablets (low-power applications).
Its low on-resistance (RDS(on)) and compact package (SOT-23) make it ideal for space-constrained, high-efficiency designs.

Package

The ZXMN6A11ZTA is an N-channel MOSFET in a SOT-23 surface-mount package. It features a compact 3-pin design, suitable for low-power applications like switching and amplification. The SOT-23 package is widely used for its small footprint and ease of PCB assembly. Key specs include a 20V drain-source voltage and 5.3A continuous drain current.

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