Изображения являются только для ссылки
ZXTN2010ZQTA
+БОМTRANS NPN 60V 5A SOT-89-3
-
ПроизводительВключенные диоды
-
Мфр. Часть #ZXTN2010ZQTA
-
Лист данных ZXTN2010ZQTA DataSheet
-
В наличии6968
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 230mV @ 300mA, 6A |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (h FE) (Min) @ Ic, Vce | 100 @ 2A, 1V |
| Power - Max | 2.1 W |
| Frequency - Transition | 130MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Supplier Device Package | SOT-89-3 |
| Base Product Number | ZXTN2010 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
Обзор
Description
When integrating ZXTN2010ZQTA into a circuit, it’s essential to consider its electrical characteristics, such as voltage ratings, current capacity, and thermal performance. Proper heat dissipation techniques, including the use of heat sinks or proper PCB layout, may be necessary to ensure longevity and performance. Always refer to the specific datasheet for detailed specifications and application guidelines. This component exemplifies the advancements in semiconductor technology aimed at enhancing device performance and energy efficiency in modern electronic designs.
Equivalent
Features
- Drain-Source Voltage (VDS): Up to 100V, allowing for robust performance in high-voltage applications.
- Continuous Drain Current (ID): Capable of handling up to 10A, suitable for medium to high-power circuits.
- Gate Threshold Voltage (VGS(th)): Low gate drive voltage, enabling efficient switching.
- RDS(on): Low on-resistance (typically around 0.1 ohms), which helps reduce power losses and increase efficiency.
- Fast Switching Speed: Optimized for rapid switching, making it ideal for applications like DC-DC converters and motor drivers.
- Package: Typically available in a TO-220 or similar package for effective heat dissipation.
These features make the ZXTN2010ZQTA an excellent choice for designers looking for reliability and efficiency in power electronic circuits.
Pinout
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied here turns the device on or off.
2. Drain (D): This pin is connected to the load and is where the current flows out of the MOSFET when it is in the 'on' state.
3. Source (S): This pin is connected to ground or the negative side of the power supply, allowing current to flow from the drain to the source when the device is on.
For precise applications, always refer to the manufacturer's datasheet for detailed specifications and characteristics.
Manufacturer
ZETEX is recognized for its innovation in developing reliable, high-performance semiconductor solutions tailored for specific market needs. Their products are widely used in applications requiring efficient power management, amplification, and signal processing. The ZXTN2010ZQTA, in particular, is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-speed switching applications, making it suitable for power management in various electronic devices.
Overall, ZETEX is a key player in the semiconductor industry, contributing to advancements in technology through its diverse range of product offerings.
Application
1. Switching Regulators: Efficiently converting voltages in power supplies.
2. DC-DC Converters: Boosting or bucking DC voltages in electronic circuits.
3. Motor Control: Driving motors in various automotive and industrial applications.
4. Load Switching: Controlling power to devices in consumer electronics and appliances.
5. Power Amplifiers: Enhancing signal power in RF applications.
Its low on-resistance and fast switching capabilities make it suitable for high-efficiency designs.