2N7002DW vs 2N7002E-T1-E3

Это подробное сравнение 2N7002DW и 2N7002E-T1-E3 предоставляет ценную информацию об их технических характеристиках и ключевых особенностях. Мы подробно рассматриваем важные факторы, включая соответствие требованиям RoHS, статус REACH, серию, способ монтажа, тип корпуса и другие соответствующие характеристики. Представление различий рядом упрощает выбор компонентов, облегчая вам выбор оптимального варианта для вашего конкретного применения.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002DW and 2N7002E-T1-E3 are both 60 V logic-level N-channel MOSFETs in SOT-23 packages, making the 2N7002E-T1-E3 a viable functional replacement candidate for the 2N7002DW in single-channel applications. However, the 2N7002DW is a dual-channel device, so designers must account for the difference in channel count and verify that the single MOSFET of the 2N7002E-T1-E3 can satisfy the circuit's switching requirements before substituting.

Channel Count Validation required

Drain-Source Voltage Rating High match

Package Type High match

Continuous Drain Current Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002DW

Онсеми

Lifecycle: Active
Stock: 6631 ПКС
Series: Транзисторы - FET, MOSFET - FET, MOSFET массивы

+БОМ RFQ

Part B

2N7002E-T1-E3

Vishay Силиконикс

Lifecycle: Active
Stock: 7566 ПКС
Package: SOT-23-3
Series: Транзисторы - FET, MOSFET - Одиночные

+БОМ RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	2N7002DW	2N7002E-T1-E3
Part Status	Active	Active
FET Type	-	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V	60 V
Current - Continuous Drain(Id) @ 25°C	-	240mA (Ta)
Drive Voltage(Max Rds On Min Rds On)	-	4.5V, 10V
Rds On(Max) @ Id Vgs	-	3Ohm @ 250mA, 10V
Vgs(th)(Max) @ Id	-	2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	-	0.6 nC @ 4.5 V
Vgs(Max)	-	±20V
Input Capacitance(Ciss)(Max) @ Vds	-	21 pF @ 5 V
Power Dissipation (Max)	-	350mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Base Product Number	2N7002	-
Configuration	2 N-Channel (Dual)	-
FET Feature	Logic Level Gate	-
Current - Continuous Drain (Id) @ 25°C	115mA	-
Rds On (Max) @ Id, Vgs	7.5Ohm @ 50mA, 5V	-
Vgs(th) (Max) @ Id	2V @ 250µA	-
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V	-
Power - Max	200mW	-
Packaging	Cut Tape (CT), Tape & Reel (TR)	-

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