2N7002,215 vs 2N7002ET1G

Это подробное сравнение 2N7002,215 и 2N7002ET1G предоставляет ценную информацию об их технических характеристиках и ключевых особенностях. Мы подробно рассматриваем важные факторы, включая соответствие требованиям RoHS, статус REACH, серию, способ монтажа, тип корпуса и другие соответствующие характеристики. Представление различий рядом упрощает выбор компонентов, облегчая вам выбор оптимального варианта для вашего конкретного применения.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002ET1G and 2N7002,215 are functionally equivalent N-channel enhancement-mode MOSFETs with matching voltage, current, and package ratings, making them suitable drop-in replacements for most low-power switching and level-shifting applications. Designers should verify gate threshold and RDS(on) tolerances against their specific circuit requirements before finalizing the substitution.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
Static Drain-Source On-Resistance Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002,215

Компания Nexperia USA Inc.

Lifecycle
Active
Stock
6582 ПКС
Package
SOT-23-3
Series
Транзисторы - FET, MOSFET - Одиночные
+БОМ RFQ
Part B

2N7002ET1G

Онсеми

Lifecycle
Active
Stock
4059 ПКС
Package
SOT-23-3
Series
Транзисторы - FET, MOSFET - Одиночные
+БОМ RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002,215 2N7002ET1G
Series TrenchMOS™ -
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) 260mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 10V 4.5V, 10V
Rds On(Max) @ Id Vgs 5Ohm @ 500mA, 10V 2.5Ohm @ 240mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Vgs(Max) ±30V ±20V
Input Capacitance(Ciss)(Max) @ Vds 50 pF @ 10 V 26.7 pF @ 25 V
Power Dissipation (Max) 830mW (Ta) 300mW (Tj)
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Gate Charge(Qg)(Max) @ Vgs - 0.81 nC @ 5 V
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