2N7002,215 vs 2N7002K-7

Это подробное сравнение 2N7002,215 и 2N7002K-7 предоставляет ценную информацию об их технических характеристиках и ключевых особенностях. Мы подробно рассматриваем важные факторы, включая соответствие требованиям RoHS, статус REACH, серию, способ монтажа, тип корпуса и другие соответствующие характеристики. Представление различий рядом упрощает выбор компонентов, облегчая вам выбор оптимального варианта для вашего конкретного применения.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002K-7 and 2N7002,215 are functionally compatible N-channel MOSFETs suitable for direct substitution in most low-power switching applications. Both devices share identical drain-source voltage, continuous drain current, and power dissipation ratings, with the primary distinction being package style and gate threshold voltage tolerance. Designers should verify gate drive compatibility and thermal layout when substituting between the SOT-23 and TO-236AB packages.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type Validation required
Gate Threshold Voltage Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002,215

Компания Nexperia USA Inc.

Lifecycle
Active
Stock
6582 ПКС
Package
SOT-23-3
Series
Транзисторы - FET, MOSFET - Одиночные
+БОМ RFQ
Part B

2N7002K-7

Включенные диоды

Lifecycle
Active
Stock
5630 ПКС
Package
SOT-23-3
Series
Транзисторы - FET, MOSFET - Одиночные
+БОМ RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002,215 2N7002K-7
Series TrenchMOS™ -
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) 380mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 10V 5V, 10V
Rds On(Max) @ Id Vgs 5Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 1mA
Vgs(Max) ±30V ±20V
Input Capacitance(Ciss)(Max) @ Vds 50 pF @ 10 V 50 pF @ 25 V
Power Dissipation (Max) 830mW (Ta) 370mW (Ta)
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Gate Charge(Qg)(Max) @ Vgs - 0.3 nC @ 4.5 V
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