2N7002KT1G vs 2N7002K-T1-GE3

Это подробное сравнение 2N7002KT1G и 2N7002K-T1-GE3 предоставляет ценную информацию об их технических характеристиках и ключевых особенностях. Мы подробно рассматриваем важные факторы, включая соответствие требованиям RoHS, статус REACH, серию, способ монтажа, тип корпуса и другие соответствующие характеристики. Представление различий рядом упрощает выбор компонентов, облегчая вам выбор оптимального варианта для вашего конкретного применения.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002K-T1-GE3 and 2N7002KT1G are functionally equivalent N-channel MOSFETs sharing identical voltage, current, and package ratings, making them suitable drop-in replacements for most designs. Minor differences in gate threshold voltage and RDS(on) specifications should be validated against circuit tolerances before substitution.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
Gate Threshold Voltage Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002KT1G

Онсеми

Lifecycle
Active
Stock
2832 ПКС
Package
SOT-23-3
Series
Транзисторы - FET, MOSFET - Одиночные
+БОМ RFQ
Part B

2N7002K-T1-GE3

Vishay Силиконикс

Lifecycle
Active
Stock
4371 ПКС
Package
SOT-23-3
Series
Транзисторы - FET, MOSFET - Одиночные
+БОМ RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002KT1G 2N7002K-T1-GE3
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 320mA (Ta) 300mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On(Max) @ Id Vgs 1.6Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 0.7 nC @ 4.5 V 0.6 nC @ 4.5 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 24.5 pF @ 20 V 30 pF @ 25 V
Power Dissipation (Max) 350mW (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Series - TrenchFET®
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