Part A
JANTX2N6796
корпорации Microsemi
- Lifecycle
- Active
- Stock
- 2949 ПКС
- Package
- TO-205AF-3
- Series
- Транзисторы - FET, MOSFET - Одиночные
Parts at a glance
Part B
JANTX2N3029
корпорации Microsemi
- Lifecycle
- Active
- Stock
- 5197 ПКС
- Package
- TO-206AA, TO-18-3 Metal Can
- Series
- Тиристоры - SCR
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | JANTX2N6796 | JANTX2N3029 |
|---|---|---|
| Supplier | - | Microchip Technology |
| Series | Military, MIL-PRF-19500/557 | Military, MIL-S-19500/419 |
| Part Status | Obsolete | Active |
| Voltage - Off State | - | 1 kV |
| Voltage - Gate Trigger(Vgt)(Max) | - | 800 mV |
| Current - Gate Trigger(Igt)(Max) | - | 200 µA |
| Voltage - On State(Vtm)(Max) | - | 1.5 V |
| Current - On State(It(RMS))(Max) | - | 250 mA |
| Current - Hold(Ih)(Max) | - | 5 mA |
| Current - Off State(Max) | - | 100 nA |
| Current - Non Rep Surge5060 Hz(Itsm) | - | 5A, 8A |
| SCR Type | - | Sensitive Gate |
| Operating Temperature | -55°C ~ 150°C (TJ) | -65°C ~ 150°C |
| Mounting Type | Through Hole | Through Hole |
| FET Type | N-Channel | - |
| Technology | MOSFET (Metal Oxide) | - |
| Drain to Source Voltage (Vdss) | 100 V | - |
| Current - Continuous Drain(Id) @ 25°C | 8A (Tc) | - |
| Drive Voltage(Max Rds On Min Rds On) | 10V | - |
| Rds On(Max) @ Id Vgs | 195mOhm @ 8A, 10V | - |
| Vgs(th)(Max) @ Id | 4V @ 250µA | - |
| Gate Charge(Qg)(Max) @ Vgs | 28.51 nC @ 10 V | - |
| Vgs(Max) | ±20V | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) | - |