2N7002K-T1-E3

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2N7002K-T1-E3

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MOSFET N-CH 60V 300MA SOT23-3

  • ПроизводительVishay Силиконикс

  • Мфр. Часть #2N7002K-T1-E3

  • Лист данных 2N7002K-T1-E3 DataSheet

  • Пакет SOT23-3

  • В наличии3495

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Спецификации

Атрибут Ценность
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 300mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 2Ohm @ 500mA, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 0.6 nC @ 4.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 30 pF @ 25 V
PowerDissipation(Max) 350mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Обзор

Equivalent

Equivalent products to the 2N7002K-T1-E3 (N-channel MOSFET, 60V, 115mA, SOT-23) include:
- BSS138 (50V, 200mA)
- DMG2302UX (20V, 4A)
- FDN340P (30V, 1.3A)
- NDS7002A (60V, 280mA)
- SI2302 (20V, 2.7A)
Check voltage/current ratings and package (SOT-23) for compatibility.

Pinout

The 2N7002K-T1-E3 is a N-channel MOSFET with 3 pins (SOT-23 package).
Pin Functions:
1. Gate (G): Controls the MOSFET's conductivity.
2. Drain (D): Connects to the load (high-side terminal).
3. Source (S): Ground/reference terminal.
Key Features:
- 60V drain-source voltage (VDS).
- 0.115A continuous drain current (ID).
- Low threshold voltage (~1V), suitable for low-power switching.
Commonly used in signal switching, level shifting, and load control in compact circuits.

Package

The 2N7002K-T1-E3 is a SOT-23 packaged N-channel MOSFET. It's a surface-mount device (SMD) with three pins, commonly used for low-power switching applications. The "T1" in the part number typically indicates tape and reel packaging for automated assembly. The compact SOT-23 package makes it suitable for space-constrained designs.

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