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2N7002K-T1-E3
+БОМMOSFET N-CH 60V 300MA SOT23-3
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ПроизводительVishay Силиконикс
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Мфр. Часть #2N7002K-T1-E3
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Лист данных 2N7002K-T1-E3 DataSheet
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Пакет SOT-23-3
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В наличии3495
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 300mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 2Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.6 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 30 pF @ 25 V |
| Power Dissipation (Max) | 350mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
Обзор
Equivalent
- BSS138 (50V, 200mA)
- DMG2302UX (20V, 4A)
- FDN340P (30V, 1.3A)
- NDS7002A (60V, 280mA)
- SI2302 (20V, 2.7A)
Check voltage/current ratings and package (SOT-23) for compatibility.
Pinout
Pin Functions:
1. Gate (G): Controls the MOSFET's conductivity.
2. Drain (D): Connects to the load (high-side terminal).
3. Source (S): Ground/reference terminal.
Key Features:
- 60V drain-source voltage (VDS).
- 0.115A continuous drain current (ID).
- Low threshold voltage (~1V), suitable for low-power switching.
Commonly used in signal switching, level shifting, and load control in compact circuits.
