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SI2302DDS-T1-GE3
+БОМMOSFET N-CH 20V 2.9A SOT23-3
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ПроизводительVishay Силиконикс
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Мфр. Часть #SI2302DDS-T1-GE3
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Лист данных SI2302DDS-T1-GE3 DataSheet
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Пакет SOT-23-3
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В наличии4873
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 2.9A (Tj) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 4.5V |
| RdsOn(Max)@IdVgs | 57mOhm @ 3.6A, 4.5V |
| Vgs(th)(Max)@Id | 850mV @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 5.5 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| PowerDissipation(Max) | 710mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
Обзор
Description
"Introduction to SI2302DDS-T1-GE3" likely refers to a course or module code, possibly within a university or educational program. While I don't have specific information about this exact course, I can offer a general understanding based on typical course naming conventions:
- SI2302: This could indicate a course number, where "SI" might stand for a subject area (e.g., Software Engineering, Systems Integration), and "2302" could denote the course level and sequence.
- DDS: This might refer to a specific focus or specialization within the course, such as "Data-driven Systems" or "Distributed Systems."
- T1: This might indicate the term or semester in which the course is offered (e.g., Term 1).
- GE3: This could stand for a General Education requirement level or category.
For precise details, including course content, objectives, and prerequisites, you'd need to consult the course syllabus or contact the educational institution offering the course.
- SI2302: This could indicate a course number, where "SI" might stand for a subject area (e.g., Software Engineering, Systems Integration), and "2302" could denote the course level and sequence.
- DDS: This might refer to a specific focus or specialization within the course, such as "Data-driven Systems" or "Distributed Systems."
- T1: This might indicate the term or semester in which the course is offered (e.g., Term 1).
- GE3: This could stand for a General Education requirement level or category.
For precise details, including course content, objectives, and prerequisites, you'd need to consult the course syllabus or contact the educational institution offering the course.
Equivalent
The SI2302DDS-T1-GE3 is a 60V N-channel MOSFET. Equivalent products include the AO3400 from Alpha & Omega Semiconductor, the IRLML2502 from Infineon Technologies, and the BSS138 from ON Semiconductor. Each of these components offers similar functionalities, but it is essential to compare their specific voltage ratings, current capacities, and RDS(on) values to ensure full compatibility with your application.
Features
The SI2302DDS-T1-GE3 is a versatile N-channel MOSFET designed for a variety of applications, known for its efficient performance and compact design. Key features include:
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of around 20V and a continuous drain current (I_D) of approximately 2.8A, making it suitable for low to moderate power applications.
2. Low On-Resistance: The MOSFET features a low on-resistance, enhancing its efficiency by minimizing power losses during operation.
3. Package Type: It is commonly available in a compact SOT-23 package, ideal for space-constrained designs.
4. Fast Switching: The device is capable of high-speed switching, which is beneficial for improving the overall efficiency and performance of the circuit in which it is used.
5. Thermal Performance: It offers decent thermal performance, which is crucial for maintaining reliability in various operating conditions.
These features make the SI2302DDS-T1-GE3 a popular choice for applications such as DC-DC converters, load switches, and battery-powered devices.
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of around 20V and a continuous drain current (I_D) of approximately 2.8A, making it suitable for low to moderate power applications.
2. Low On-Resistance: The MOSFET features a low on-resistance, enhancing its efficiency by minimizing power losses during operation.
3. Package Type: It is commonly available in a compact SOT-23 package, ideal for space-constrained designs.
4. Fast Switching: The device is capable of high-speed switching, which is beneficial for improving the overall efficiency and performance of the circuit in which it is used.
5. Thermal Performance: It offers decent thermal performance, which is crucial for maintaining reliability in various operating conditions.
These features make the SI2302DDS-T1-GE3 a popular choice for applications such as DC-DC converters, load switches, and battery-powered devices.
Pinout
The SI2302DDS-T1-GE3 is a MOSFET transistor. It is a small signal N-channel MOSFET typically used for switching applications. The device is housed in a SOT-23 package, which is a common surface-mount package type with three pins.
Pin Count:
1. Drain (D)
2. Source (S)
3. Gate (G)
Function:
- Drain (D): The drain is the terminal where the charge carriers (electrons for N-channel) exit the transistor. It is the output of the switching device.
- Source (S): The source is the terminal where the charge carriers enter the transistor. It is typically connected to ground or a lower potential in most applications.
- Gate (G): The gate controls the opening and closing of the channel between the drain and source. A voltage applied to the gate allows current to flow between the drain and source, effectively "switching" the device on.
The SI2302DDS-T1-GE3 is widely used in low-voltage applications due to its compact size and efficient switching capabilities.
Pin Count:
1. Drain (D)
2. Source (S)
3. Gate (G)
Function:
- Drain (D): The drain is the terminal where the charge carriers (electrons for N-channel) exit the transistor. It is the output of the switching device.
- Source (S): The source is the terminal where the charge carriers enter the transistor. It is typically connected to ground or a lower potential in most applications.
- Gate (G): The gate controls the opening and closing of the channel between the drain and source. A voltage applied to the gate allows current to flow between the drain and source, effectively "switching" the device on.
The SI2302DDS-T1-GE3 is widely used in low-voltage applications due to its compact size and efficient switching capabilities.
Manufacturer
The SI2302DDS-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer known for producing discrete semiconductors and passive electronic components. Founded in 1962 by Dr. Felix Zandman, the company has grown significantly and is recognized as one of the largest manufacturers in the electronics industry. Vishay's product portfolio includes a wide range of components such as resistors, inductors, capacitors, diodes, and transistors, which are used across various applications in automotive, industrial, consumer, telecommunications, computing, and military sectors. The company is known for its innovation and commitment to high-quality products that meet the demands of modern technology.
Application
The SI2302DDS-T1-GE3 is a P-Channel MOSFET commonly used in various electronic applications. Its primary application areas include power management in portable devices, load switching, and DC-DC converters. It is also suitable for use in battery-powered applications due to its low on-resistance and efficient power handling capabilities. Additionally, it can be employed in motor control circuits and as a general-purpose switch in low-voltage applications. Its compact size and surface-mount design make it ideal for use in space-constrained environments.
Package
The SI2302DDS-T1-GE3 is a surface-mount package type, specifically in a SOT-23 package. This package is commonly used for small, low-power devices like MOSFETs, providing a compact form factor suitable for space-constrained applications.
