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2SB1184TLR
+БОМTRANS PNP 50V 3A CPT3
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Производителькомпанией Rohm Semiconductor
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Мфр. Часть #2SB1184TLR
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Лист данных 2SB1184TLR DataSheet
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Пакет TO-252-3
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В наличии5357
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | Rohm Semiconductor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | PNP |
| Current - Collector(Ic)(Max) | 3 A |
| Voltage - Collector Emitter Breakdown(Max) | 50 V |
| Vce Saturation(Max) @ Ib Ic | 1V @ 200mA, 2A |
| Current - Collector Cutoff(Max) | 1µA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 180 @ 500mA, 3V |
| Power - Max | 1 W |
| Frequency - Transition | 70MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
Обзор
Description
Key features of the 2SB1184TLR include a collector-emitter voltage (V_CEO) of around 50V and a continuous collector current (I_C) of approximately 1.5A. Its small form factor and efficient performance make it ideal for use in compact and portable devices. The package type is typically SOT-89, which provides a good balance between thermal performance and board space efficiency.
In terms of applications, the 2SB1184TLR can be used in amplifiers, signal processing circuits, and as a switch in various electronic components. Its reliability and ease of integration are beneficial for both hobbyists and professionals designing electronic systems.
Equivalent
Features
1. Type: It is a PNP transistor, meaning it has a positive-negative-positive configuration.
2. Package: Typically available in a SOT-89 package, which is a surface-mount package ideal for compact designs.
3. Current Handling: The transistor can handle a collector current (Ic) of up to 1.5A, making it suitable for moderate power applications.
4. Voltage Ratings: It features a collector-emitter voltage (Vceo) of 50V, which indicates the maximum voltage it can withstand between collector and emitter when in the off state.
5. Power Dissipation: The power dissipation capability is about 500mW, allowing it to function effectively without overheating under proper conditions.
6. Gain: The device typically offers a current gain (hFE) ranging from 60 to 320, ensuring good amplification properties.
7. Applications: It is used in amplification and switching applications, including signal amplification, load switching, and other electronic circuits requiring PNP transistors.
These features make it versatile for various electronic design projects.
Pinout
1. Emitter (E): Releases charged carriers into the base region; current flows out through this pin in a PNP transistor.
2. Base (B): Controls the transistor’s operation by allowing a small current to enable a larger current between the collector and emitter.
3. Collector (C): The main current-carrying terminal, where current flows into the transistor.
The 2SB1184TLR is commonly used for low-frequency, general-purpose amplification and switching applications due to its good gain characteristics and reliable performance. Always refer to the specific datasheet for precise electrical characteristics and thermal properties.
Manufacturer
Application
1. Switching Circuits: Used in switching applications where moderate current levels are required.
2. Amplification: Works in low to medium power amplification tasks in audio and signal processing circuits.
3. General-Purpose Electronic Circuits: Suitable for use in a variety of general-purpose amplification and switching needs.
4. Consumer Electronics: Utilized in devices such as TVs, radios, and other consumer electronic products.
5. Industrial Controls: Implemented in control circuits within industrial applications.
These transistors are valued for their reliability and efficiency in both consumer and industrial electronics.