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AON7296
+БОМMOSFET N-CH 100V 5A/12.5A 8DFN
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ПроизводительКомпания Alpha & Omega Semiconductor Inc.
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Мфр. Часть #AON7296
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Лист данных AON7296 DataSheet
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В наличии6095
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | Alpha & Omega Semiconductor Inc. |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 5A (Ta), 12.5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 66mOhm @ 5A, 10V |
| Vgs(th)(Max)@Id | 2.8V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 12 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 415 pF @ 50 V |
| PowerDissipation(Max) | 3.1W (Ta), 20.8W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-DFN-EP (3x3) |
Обзор
Description
The MOSFET operates with a gate-source voltage and is designed to switch on and off rapidly, providing fast response times for dynamic power applications. It is typically housed in a compact package, making it ideal for use in space-constrained environments. The device also offers high reliability and thermal performance, ensuring stable operation under varying temperatures and electrical conditions. With its robust design, the AON7296 supports enhanced heat dissipation and can handle large amounts of power while minimizing the risk of overheating.
Overall, AON7296 is favored for its high efficiency, reliability, and suitability for modern electronic power management systems.
Equivalent
1. IRF530 by Infineon.
2. FQP13N06L by ON Semiconductor.
3. STP36NF06 by STMicroelectronics.
When selecting an equivalent, ensure that the voltage, current ratings, and package type match the requirements of your specific application. Always verify the datasheets for exact specifications and compatibility.
Features
1. N-Channel MOSFET: Suitable for high-efficiency switching applications.
2. Low On-Resistance: Offers low RDS(on) which reduces conduction losses and improves efficiency.
3. Voltage Rating: Typically has a drain-source voltage (VDS) rating that supports common power supply levels.
4. Current Handling: Capable of handling significant current, making it suitable for high-power applications.
5. Package Type: Often available in compact packages, enhancing thermal performance and space-saving on PCBs.
6. Thermal Performance: Designed to handle high temperatures, maintaining reliability under varying conditions.
7. Applications: Commonly used in DC-DC converters, power management in computing and communication devices, and other electronic systems requiring efficient power switching.
These features make the AON7296 a versatile choice for engineers designing systems with stringent power efficiency and performance requirements.
Pinout
1. Source (S): Multiple pins are usually connected to the source to facilitate efficient current flow and heat dissipation.
2. Gate (G): This pin controls the MOSFET's switching operation by applying a voltage.
3. Drain (D): This pin is where the load current flows from, and it is typically connected to multiple pins for better performance.
The specific pin configuration might vary slightly based on the manufacturer’s specifications and the specific package variant, so it's advisable to refer to the datasheet of the specific AON7296 model you are using for precise pin assignments and electrical characteristics.