Спецификации
| Атрибут | Ценность |
| Supplier | Microchip Technology |
| Package | Bulk |
| ProductStatus | Active |
| FETType | 4 N-Channel (Half Bridge) |
| FETFeature | Standard |
| DraintoSourceVoltage(Vdss) | 1000V (1kV) |
| Current-ContinuousDrain(Id)@25°C | 18A |
| RdsOn(Max)@IdVgs | 540mOhm @ 9A, 10V |
| Vgs(th)(Max)@Id | 5V @ 2.5mA |
| GateCharge(Qg)(Max)@Vgs | 154nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 4350pF @ 25V |
| Power-Max | 357W |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Chassis Mount |
| Package/Case | SP4 |
