Спецификации
| Атрибут | Ценность |
| Supplier | Microchip Technology |
| Package / Case | Bulk |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual), Schottky |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain(Id) @ 25°C | 148A (Tc) |
| Rds On(Max) @ Id Vgs | 25mOhm @ 80A, 20V |
| Vgs(th)(Max) @ Id | 3V @ 4mA |
| Gate Charge(Qg)(Max) @ Vgs | 544nC @ 20V |
| Input Capacitance(Ciss)(Max) @ Vds | 10200pF @ 1000V |
| Power - Max | 937W |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
