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AS4C32M16SB-7TIN
+БОМIC DRAM 512MBIT PAR 54TSOP II
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ПроизводительКомпания Alliance Memory, Inc.
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Мфр. Часть #AS4C32M16SB-7TIN
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Лист данных AS4C32M16SB-7TIN DataSheet
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Пакет TSOP-54
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В наличии6760
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package / Case | Tray |
| Part Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 512Mb (32M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 143 MHz |
| Write Cycle Time - Word Page | 14ns |
| Access Time | 5.4 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Обзор
Description
Equivalent
1. Micron MT48LC32M16A2 - 512Mb DDR SDRAM.
2. Samsung K4H511638J-LCCC - 512Mb DDR SDRAM.
3. Nanya NT5DS32M16BG - 512Mb DDR SDRAM.
4. Hynix HY5DU121622CTP-D43 - 512Mb DDR SDRAM.
These alternatives are similar in terms of density and DDR SDRAM technology but confirm compatibility with specific requirements.
Manufacturer
Application
1. Embedded Systems: Utilized in microcontrollers and processors for industrial automation and IoT devices.
2. Telecommunications: Supports networking equipment such as routers and switches.
3. Consumer Electronics: Found in devices like digital cameras, gaming consoles, and smart TVs.
4. Automotive Systems: Applied in infotainment systems and advanced driver-assistance systems (ADAS).
5. Medical Devices: Used in imaging equipment and portable diagnostic tools.
Its reliability and performance make it suitable for any application requiring robust and efficient memory storage.