AS6C2016-55ZIN

The AS6C2016-55ZIN is a CMOS static RAM (SRAM) chip designed for a variety of applications requiring fast and reliable memory solutions. It features a organization of 256K x 8 bits, providing a total memory capacity of 2 megabits. The device operates at a supply voltage of 2.7V to 3.6V, making it suitable for low-power applications.
With a maximum access time of 55 nanoseconds, it offers quick data retrieval, essential for high-speed operations. The chip is compatible with standard SRAM interfaces, facilitating easy integration into systems. It supports both read and write operations, with a simple control architecture that includes chip enable (CE), write enable (WE), and output enable (OE) pins.
The AS6C2016-55ZIN is commonly used in telecommunications, consumer electronics, and computer applications, where reliability and performance are crucial. Its robust design ensures durability and longevity in various operating conditions.

The AS6C2016-55ZIN is a 2Mbit (256K x 8) SRAM chip. Equivalent products include:
1. CY7C199D-55
2. IDT71V256S-55
3. ISSI IS61C2016-55T
4. MT5C2568-55
Always verify specifications and pin configurations before substitution.

The AS6C2016-55ZIN is a 2M x 16-bit asynchronous SRAM. It features a pin count of 32 pins.
Key functions of the pins include:
1. Data Pins (DQ0-DQ15): These are the data input/output pins for 16-bit data transfer.
2. Address Pins (A0-A10): These pins are used to select the memory address for read/write operations.
3. Chip Enable (CE): Activates the chip; when low, the chip is enabled.
4. Output Enable (OE): Controls the output; when low, data is available on the data pins.
5. Write Enable (WE): Controls write operations; when low, it allows data to be written to the memory.
6. Power Supply Pins (VCC and VSS): Power and ground connections.
7. Burst Control (UB and LB): Controls upper and lower byte operations.
The AS6C2016-55ZIN is commonly used in applications requiring high-speed data storage, such as in networking and telecommunications.

The AS6C2016-55ZIN is manufactured by Alliance Memory, Inc. Alliance Memory is a semiconductor company that specializes in providing legacy memory solutions, including DRAM and SRAM products. The company focuses on the development and distribution of high-performance memory devices that are compatible with older technology standards, catering primarily to industries such as consumer electronics, telecommunications, automotive, and industrial applications.
Alliance Memory's offerings often include asynchronous and synchronous DRAM, as well as various types of SRAM, supporting a wide range of applications from embedded systems to high-speed computing. They emphasize quality, reliability, and the ability to meet specific customers' needs, making them a key player in the memory sector, particularly for clients requiring alternatives to obsolete components. Their products are designed to ensure compatibility and performance in systems that rely on older memory technologies.

The AS6C2016-55ZIN is a 2 Mbit (256K x 8) CMOS static RAM (SRAM) chip commonly used in various application areas such as:
1. Consumer Electronics: In devices like digital cameras and portable media players for data buffering.
2. Networking Equipment: For temporary data storage in routers and switches.
3. Industrial Automation: In control systems and robotics for quick data access.
4. Embedded Systems: In microcontroller-based applications for fast memory access.
5. Medical Devices: In diagnostic and monitoring equipment for data logging and retrieval.
Its low power consumption and fast access times make it suitable for these applications.

The AS6C2016-55ZIN is packaged in a 32-pin TSOP II (Thin Small Outline Package) configuration. This package type is designed for compactness and efficient usage of space on printed circuit boards.