Изображения являются только для ссылки
AUIRF7342QTR
+БОМMOSFET 2P-CH 55V 3.4A 8SOIC
-
Производителькомпанией Infineon Technologies
-
Мфр. Часть #AUIRF7342QTR
-
Лист данных AUIRF7342QTR DataSheet
-
Пакет 8-SOIC
-
В наличии3197
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | Automotive, AEC-Q101, HEXFET® |
| ProductStatus | Active |
| FETType | 2 P-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 55V |
| Current-ContinuousDrain(Id)@25°C | 3.4A |
| RdsOn(Max)@IdVgs | 105mOhm @ 3.4A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 38nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 690pF @ 25V |
| Power-Max | 2W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Обзор
Description
- Low On-Resistance (RDS(on)): Typically 4.5 mΩ per channel at 10 V (VGS), reducing conduction losses.
- High Current Handling: Up to 30 A per channel (pulsed).
- Fast Switching: Optimized for high-frequency operation (e.g., buck/boost converters).
- Low Gate Charge (Qg): Enhances efficiency in switching applications.
- Compact Package: PQFN 5x6 mm, suitable for space-constrained designs.
- Protection: Integrated body diodes for reverse current handling.
Commonly used in power supplies, motor drives, and automotive systems, the AUIRF7342QTR offers reliable performance with thermal and electrical robustness.
Features
- Voltage Rating: 30V
- Current Rating: 13A (per channel)
- Low On-Resistance: 8.5mΩ (max) @ VGS = 10V
- Fast Switching: Optimized for high-efficiency power applications
- Logic-Level Gate Drive: Compatible with 4.5V drive
- Dual MOSFET Configuration: Two independent N-channel MOSFETs in a single package
- Package: PQFN 5x6mm (PowerQFN), space-saving design
- Low Gate Charge (Qg): Enhances switching performance
- AEC-Q101 Qualified: Suitable for automotive applications
Ideal for DC-DC converters, motor control, and power management in automotive and industrial systems.
Pinout
Pin Functions:
1. Source 1 (S1): Source of N-channel MOSFET (Pin 1).
2. Gate 1 (G1): Gate of N-channel MOSFET (Pin 2).
3. Drain 1 (D1): Drain of N-channel MOSFET (Pin 3).
4. Drain 2 (D2): Drain of P-channel MOSFET (Pin 6).
5. Gate 2 (G2): Gate of P-channel MOSFET (Pin 7).
6. Source 2 (S2): Source of P-channel MOSFET (Pin 8).
Pins 4 & 5 are NC (No Connection).
Key Features:
- 30V/20V dual MOSFET (N+P).
- Low on-resistance (RDS(on)).
- Optimized for synchronous buck converters.
Application
- DC-DC Converters: Efficient voltage regulation in power supplies.
- Motor Control: Driving and braking in automotive and industrial systems.
- Load Switching: Power distribution in battery management (BMS) and hot-swap circuits.
- Automotive Systems: Engine control, lighting, and infotainment power handling.
- Synchronous Rectification: Improving efficiency in SMPS and inverters.
Its compact package (PQFN 3x3) and low RDS(on) make it ideal for space-constrained, high-efficiency designs.