BCM846SH6327

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BCM846SH6327

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  • Производителькомпанией Infineon Technologies

  • Мфр. Часть #BCM846SH6327

  • Лист данных BCM846SH6327 DataSheet

  • Пакет VSSOP-6

  • В наличии5507

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Спецификации

Атрибут Ценность
Package Bulk
Series Automotive, AEC-Q101
ProductStatus Active
TransistorType 2 NPN (Dual)
Current-Collector(Ic)(Max) 100mA
Voltage-CollectorEmitterBreakdown(Max) 65V
VceSaturation(Max)@IbIc 650mV @ 5mA, 100mA
Current-CollectorCutoff(Max) 15nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 200 @ 2mA, 5V
Power-Max 250mW
Frequency-Transition 250MHz
OperatingTemperature 150°C (TJ)
MountingType Surface Mount
Package/Case 6-VSSOP, SC-88, SOT-363

Обзор

Description

The BCM846SH6327 is a high-performance dual NPN/PNP transistor in a SC-74 (SOT-457) package, designed by Infineon Technologies. It features:
- Dual complementary transistors (1 NPN + 1 PNP)
- Low saturation voltage for efficient switching
- High current gain (hFE) for amplification
- Small footprint, ideal for space-constrained applications
Key Applications:
- Signal amplification
- Switching circuits
- Load drivers in portable electronics
Key Parameters:
- VCEO (NPN/PNP): 50V / -50V
- IC (max): 500mA
- Ptot: 300mW
This transistor is commonly used in consumer electronics, automotive systems, and industrial controls due to its reliability and compact design.
For detailed specs, refer to the Infineon datasheet.

Equivalent

Equivalent products to the BCM846SH6327 (dual NPN/PNP transistor) include:
- BCM847BS (similar dual transistor, SOT-363 package)
- DTC143ZUA (Rohm, digital transistor)
- PMBT3906/PMBT3904 (single counterparts, but can be paired)
- MMBT3904/MMBT3906 (common SOT-23 alternatives)
Check datasheets for exact specs.

Features

The BCM846SH6327 is a high-performance RF transistor from Infineon, designed for applications up to 6 GHz. Key features include:
- Frequency Range: DC to 6 GHz, suitable for broadband and RF applications.
- High Gain: Typical 18 dB at 2 GHz, ensuring strong signal amplification.
- Low Noise Figure: ~0.8 dB at 2 GHz, ideal for sensitive receivers.
- High Linearity: OIP3 of ~40 dBm at 2 GHz, reducing distortion.
- Power Output: ~24 dBm (250 mW) saturated power for robust performance.
- Voltage & Current: Operates at 5V with 80 mA typical current.
- Package: SOT-343 (SC-70), compact for space-constrained designs.
Common uses include LNA (Low-Noise Amplifier), driver stages, and general RF amplification in wireless infrastructure, IoT, and telecom systems.

Application

The BCM846SH6327 is a dual NPN/PNP transistor in a small SOT-363 package, commonly used in:
1. Signal Amplification – Audio and RF circuits.
2. Switching Applications – High-speed digital logic.
3. Differential Pairs – Analog and mixed-signal designs.
4. Portable Electronics – Space-constrained devices like smartphones.
5. Automotive Systems – Sensor interfaces and control modules.
Its low noise, high gain, and compact size make it ideal for high-frequency and low-power applications.

Package

The BCM846SH6327 is a high-speed differential amplifier from Infineon, available in a SOT-363 (SC-70-6) surface-mount package. This compact 6-pin package is designed for space-constrained applications, offering excellent performance in high-frequency circuits. Its small footprint (2.0 x 1.25 mm) makes it suitable for modern electronics like RF and communication systems.

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