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BR24G32FVT-3AGE2
+БОМIC EEPROM 32KBIT I2C 8TSSOPB
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Производителькомпанией Rohm Semiconductor
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Мфр. Часть #BR24G32FVT-3AGE2
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Лист данных BR24G32FVT-3AGE2 DataSheet
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Пакет TSSOP-8
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В наличии4229
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | EEPROM |
| Technology | EEPROM |
| Memory Size | 32Kb (4K x 8) |
| Memory Interface | I²C |
| Clock Frequency | 1 MHz |
| Write Cycle Time - Word Page | 5ms |
| Voltage - Supply | 1.7V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Обзор
Description
The device operates at a wide voltage range, typically from 1.7V to 5.5V, making it versatile for different power supply environments. It is highly reliable with a write endurance of up to 1 million cycles and offers data retention capability of up to 40 years. The BR24G32FVT-3AGE2 comes in a compact package, making it suitable for space-constrained applications.
Key features include a low power consumption design, high-speed operation, and the ability to address multiple devices on the same bus, enhancing its integration flexibility. It is typically used in consumer electronics, industrial systems, and automotive applications where reliable data storage is critical.
Equivalent
1. Microchip 24LC32A
2. STMicroelectronics M24C32
3. Atmel/Microchip AT24C32
4. ON Semiconductor CAT24C32
5. NXP PCF8532
These are EEPROMs with similar memory capacity, interface, and voltage ratings, suitable for applications requiring non-volatile data storage.
Features
1. Memory Capacity: It offers 32K bits (4K x 8) of EEPROM memory.
2. Interface: Utilizes the I²C (Inter-Integrated Circuit) protocol for communication, supporting standard, fast, and fast-plus modes.
3. Operating Voltage: Functions within a voltage range of 1.7V to 5.5V, making it versatile for various power supply conditions.
4. Temperature Range: Designed to operate in a wide temperature range from -40°C to +85°C, suitable for industrial applications.
5. Low Power Consumption: Features low current consumption during both read and write operations, enhancing energy efficiency.
6. Write Protection: Includes a write-protect function to guard against accidental data modification.
7. Package: Available in a compact TSSOP-B8 package, facilitating easy integration into space-constrained designs.
8. Reliability: Offers high reliability with a data retention period of over 100 years and up to 1 million write/erase cycles.
These features make the BR24G32FVT-3AGE2 suitable for use in consumer electronics, industrial applications, and other fields requiring reliable non-volatile memory.
Pinout
1. A0, A1, A2: These are address pins used to set the least significant bits of the device address, allowing for the connection of multiple EEPROMs on the same I2C bus.
2. VCC: Power supply pin.
3. GND: Ground pin.
4. SDA (Serial Data): This pin is used for both input and output. It is a bidirectional line for serial data transfer.
5. SCL (Serial Clock): This pin is used to input the clock pulses that synchronize data transfer on the I2C bus.
6. WP (Write Protect): This pin is used to protect the EEPROM from write operations. When this pin is connected to VCC, the write protection is enabled.
This pin configuration allows the BR24G32FVT-3AGE2 to perform read and write operations via the I2C protocol, making it suitable for applications requiring non-volatile memory storage.