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BSC009NE2LS5
+БОМMOSFETs TRENCH <= 40V
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Производителькомпанией Infineon Technologies
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Мфр. Часть #BSC009NE2LS5
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Лист данных BSC009NE2LS5 DataSheet
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В наличии16564
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Packaging | Reel |
Обзор
Description
If we consider it as a typical course code, here’s a general approach to understanding such codes:
1. BSC: Often indicates a Bachelor of Science program or course.
2. 009: This could denote the course level, sequence, or a specific subject area within the BSc program.
3. NE2LS5: This part might include identifiers for the department, specific curriculum details, or location/online format.
Typically, course introductions cover the basic objectives, outline key topics, and explain prerequisites and outcomes. To provide a precise introduction, check the institution's course catalog or contact their administrative office for specifics on BSC009NE2LS5.
Equivalent
1. NXP PSMN1R2-30PL
2. Vishay Siliconix SiR800DP
3. ON Semiconductor NTMFS5C604NL
When choosing an equivalent, ensure it meets the specific requirements of your application regarding parameters like Rds(on), gate charge, and thermal performance.
Features
1. Voltage Rating: It typically has a drain-source voltage (V_DS) rating of around 30V, suitable for low to medium voltage applications.
2. Current Capacity: It can handle a continuous drain current (I_D) of approximately 25A, making it suitable for moderate power applications.
3. Low On-Resistance: This MOSFET has a low on-state resistance (R_DS(on)), which reduces power loss and improves efficiency.
4. Fast Switching: Designed for fast switching speeds, this component is ideal for high-speed applications.
5. Thermal Performance: It often includes features for enhanced thermal performance, such as a power dissipation rating that supports efficient heat management.
6. Package Type: It is commonly available in a standard power package like DPAK, which aids in efficient heat dissipation.
These features make the BSC009NE2LS5 suitable for applications in power management, motor drives, and other electronics requiring efficient switching.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows the current to flow between the drain and source.
2. Drain (D): In a typical 8-pin configuration, multiple pins (usually 4) are internally connected to the drain. Pins 5, 6, 7, and 8 commonly serve this purpose.
3. Source (S): The source pin is the terminal for the current flowing out of the MOSFET. In a SuperSO8 package, multiple pins (usually 3) are connected as the source, often pins 1, 2, and 3.
4. Body/Source (S): Pin 4 is typically used for the source/body connection in some layouts.
The BSC009NE2LS5 is designed for high efficiency and fast switching applications, often used in power management and conversion systems.