Спецификации
| Атрибут | Ценность |
| Package / Case | Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 50 V |
| Current - Continuous Drain(Id) @ 25°C | 220mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 2.5V |
| Rds On(Max) @ Id Vgs | 1.6Ohm @ 50mA, 5V |
| Vgs(th)(Max) @ Id | 1.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 2.4 nC @ 10 V |
| Vgs(Max) | ±12V |
| Input Capacitance(Ciss)(Max) @ Vds | 58 pF @ 25 V |
| Power Dissipation (Max) | 350mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
Обзор
Description
The BSS138K is a N-channel enhancement-mode MOSFET designed for low-voltage, low-power applications. Key features include:
- Low threshold voltage (VGS(th) ~ 1.5V max)
- Low on-resistance (RDS(on) ~ 3.5Ω at VGS=4.5V)
- Small SOT-23 package, ideal for space-constrained designs
- Max drain-source voltage (VDS) of 50V
- Low gate charge, enabling fast switching
Commonly used in load switching, level shifting, and signal routing in portable electronics, IoT devices, and battery-powered systems. Its low gate drive requirements make it compatible with 3.3V/5V logic.
For detailed specs, refer to the datasheet from manufacturers like Diodes Inc., Nexperia, or ON Semiconductor.
- Low threshold voltage (VGS(th) ~ 1.5V max)
- Low on-resistance (RDS(on) ~ 3.5Ω at VGS=4.5V)
- Small SOT-23 package, ideal for space-constrained designs
- Max drain-source voltage (VDS) of 50V
- Low gate charge, enabling fast switching
Commonly used in load switching, level shifting, and signal routing in portable electronics, IoT devices, and battery-powered systems. Its low gate drive requirements make it compatible with 3.3V/5V logic.
For detailed specs, refer to the datasheet from manufacturers like Diodes Inc., Nexperia, or ON Semiconductor.
Equivalent
Equivalent products to the BSS138K (N-channel MOSFET, 50V, 0.22A, SOT-23) include:
- DMN1019USN (Diodes Inc.)
- 2N7002K (ON Semiconductor)
- FDN337N (Fairchild/ON Semi)
- NDS7002A (Fairchild/ON Semi)
- BS138 (similar specs, different package)
Check datasheets for exact compatibility in your circuit.
- DMN1019USN (Diodes Inc.)
- 2N7002K (ON Semiconductor)
- FDN337N (Fairchild/ON Semi)
- NDS7002A (Fairchild/ON Semi)
- BS138 (similar specs, different package)
Check datasheets for exact compatibility in your circuit.
Features
The BSS138K is a N-channel enhancement-mode MOSFET with key features:
- Low Threshold Voltage (VGS(th)): ~1.3V (typ.), suitable for low-voltage applications.
- Low On-Resistance (RDS(on)): ~3.5Ω at VGS=4.5V, ensuring efficient switching.
- Small Package (SOT-23): Compact and ideal for space-constrained designs.
- Low Gate Charge (Qg): ~0.8nC, enabling fast switching speeds.
- Voltage Ratings:
- Drain-Source (VDS): 50V
- Gate-Source (VGS): ±20V
- Low Power Consumption: Ideal for battery-powered devices.
- Applications: Load switching, level shifting, and signal amplification in portable electronics, IoT, and logic circuits.
A cost-effective, efficient MOSFET for low-power, high-speed switching.
- Low Threshold Voltage (VGS(th)): ~1.3V (typ.), suitable for low-voltage applications.
- Low On-Resistance (RDS(on)): ~3.5Ω at VGS=4.5V, ensuring efficient switching.
- Small Package (SOT-23): Compact and ideal for space-constrained designs.
- Low Gate Charge (Qg): ~0.8nC, enabling fast switching speeds.
- Voltage Ratings:
- Drain-Source (VDS): 50V
- Gate-Source (VGS): ±20V
- Low Power Consumption: Ideal for battery-powered devices.
- Applications: Load switching, level shifting, and signal amplification in portable electronics, IoT, and logic circuits.
A cost-effective, efficient MOSFET for low-power, high-speed switching.
Pinout
The BSS138K is a N-channel MOSFET with 3 pins (SOT-23 package).
Pin Functions:
1. Gate (G): Controls the switching (input signal).
2. Drain (D): Connects to the load (output).
3. Source (S): Ground/reference terminal.
Key Features:
- Low threshold voltage (suitable for 3.3V/5V logic).
- 60V drain-source voltage (VDS).
- 200mA continuous drain current (ID).
Commonly used for level shifting, load switching, and signal inversion in low-power circuits.
Pin Functions:
1. Gate (G): Controls the switching (input signal).
2. Drain (D): Connects to the load (output).
3. Source (S): Ground/reference terminal.
Key Features:
- Low threshold voltage (suitable for 3.3V/5V logic).
- 60V drain-source voltage (VDS).
- 200mA continuous drain current (ID).
Commonly used for level shifting, load switching, and signal inversion in low-power circuits.
Manufacturer
The BSS138K is manufactured by Nexperia, a leading semiconductor company specializing in high-performance discrete, logic, and MOSFET devices. Nexperia was originally part of NXP Semiconductors before becoming an independent entity in 2017.
Headquartered in Nijmegen, Netherlands, Nexperia focuses on efficiency, reliability, and miniaturization, serving industries like automotive, industrial, and consumer electronics. The BSS138K is one of their popular N-channel MOSFETs, widely used for switching and amplification in low-power applications.
Nexperia is known for its high-volume production and stringent quality standards, making it a trusted supplier in the semiconductor market.
Headquartered in Nijmegen, Netherlands, Nexperia focuses on efficiency, reliability, and miniaturization, serving industries like automotive, industrial, and consumer electronics. The BSS138K is one of their popular N-channel MOSFETs, widely used for switching and amplification in low-power applications.
Nexperia is known for its high-volume production and stringent quality standards, making it a trusted supplier in the semiconductor market.
Application
The BSS138K, a small-signal N-channel MOSFET, is commonly used in:
1. Low-power switching – Ideal for load switching in portable devices.
2. Logic level conversion – Converts signals between 3.3V and 5V systems.
3. Signal amplification – Used in audio and RF circuits.
4. Battery management – Protects circuits in low-voltage applications.
5. Embedded systems – Found in IoT devices, sensors, and microcontrollers.
Its low threshold voltage (1.5V max) and compact SOT-23 package make it suitable for space-constrained, energy-efficient designs.
1. Low-power switching – Ideal for load switching in portable devices.
2. Logic level conversion – Converts signals between 3.3V and 5V systems.
3. Signal amplification – Used in audio and RF circuits.
4. Battery management – Protects circuits in low-voltage applications.
5. Embedded systems – Found in IoT devices, sensors, and microcontrollers.
Its low threshold voltage (1.5V max) and compact SOT-23 package make it suitable for space-constrained, energy-efficient designs.
Package
The BSS138K is a N-channel MOSFET available in a SOT-23 surface-mount package. This compact 3-pin package is widely used for low-power applications due to its small size and ease of assembly. The SOT-23 package is suitable for automated PCB assembly and offers good thermal and electrical performance for its size.
