Спецификации
| Атрибут | Ценность |
| Supplier | Wolfspeed, Inc. |
| Package / Case | Tray |
| Part Status | Active |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain(Id) @ 25°C | 182A (Tj) |
| Rds On(Max) @ Id Vgs | 10.4mOhm @ 150A, 15V |
| Vgs(th)(Max) @ Id | 3.6V @ 46mA |
| Gate Charge(Qg)(Max) @ Vgs | 472nC @ 15V |
| Input Capacitance(Ciss)(Max) @ Vds | 13600pF @ 800V |
| Power - Max | 10mW (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
