Спецификации
| Атрибут | Ценность |
| Package / Case | 1 |
| Series | Box |
| FET Type | Active |
| FET Feature | 2 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | Silicon Carbide (SiC) |
| Current - Continuous Drain(Id) @ 25°C | 1200V (1.2kV) |
| Rds On(Max) @ Id Vgs | 228A (Tc) |
| Vgs(th)(Max) @ Id | 10.4mOhm @ 175A, 15V |
| Gate Charge(Qg)(Max) @ Vgs | 3.6V @ 43mA |
| Input Capacitance(Ciss)(Max) @ Vds | 422nC @ 15V |
| Power - Max | 12900pF @ 800V |
| Mounting Type | -40°C ~ 150°C (TJ) |
