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DN3135K1-G
+БОМMOSFET N-CH 350V 72MA SOT23-3
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ПроизводительТехнология микрочипов
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Мфр. Часть #DN3135K1-G
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Лист данных DN3135K1-G DataSheet
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Пакет SOT-23-3
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В наличии1599
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 350 V |
| Current-ContinuousDrain(Id)@25°C | 72mA (Tj) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 0V |
| RdsOn(Max)@IdVgs | 35Ohm @ 150mA, 0V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 120 pF @ 25 V |
| FETFeature | Depletion Mode |
| PowerDissipation(Max) | 360mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 |
Обзор
Description
Key features of the DN3135K1-G often include low on-resistance, which enables efficient current flow, a high-speed switching capability for rapid on/off states, and robustness to handle significant power loads. These characteristics contribute to the component's effectiveness in minimizing energy loss and improving overall system performance.
Manufacturers generally package this MOSFET in a surface-mount format, facilitating easy integration into printed circuit boards (PCBs). Additionally, the "G" suffix usually denotes RoHS compliance, indicating that the component is manufactured without certain hazardous substances, aligning with environmental and safety standards.
To ensure proper functionality, designers must consider the MOSFET's voltage and current ratings in accordance with its intended application.
Equivalent
1. Infineon IRF7103.
2. ON Semiconductor NTD4906N.
3. Vishay Si4532EY.
4. Texas Instruments CSD19534Q5A.
When selecting an equivalent, ensure compatibility in voltage, current ratings, and package type. Always refer to the datasheets for precise specifications.
Features
1. Dual N-Channel Design: It integrates two N-channel MOSFETs in a single package, optimizing space and simplifying design circuits.
2. Low On-Resistance: The device provides low on-resistance, which ensures efficient current flow and reduces power loss, improving overall system performance.
3. Compact Package: Encased in a small package, it is suitable for space-constrained applications, making it ideal for portable and compact electronic devices.
4. High-Speed Switching: The MOSFET offers fast switching speeds, beneficial for applications requiring quick response times.
5. Thermal Performance: Designed to handle heat effectively, offering reliability under various operating conditions.
6. Wide Range of Applications: Suitable for use in DC-DC converters, load switches, and other power management functions.
7. RoHS Compliant: The product is compliant with RoHS standards, ensuring it meets environmental and safety regulations.
These features make the DN3135K1-G a reliable choice for efficient power management in electronic applications.
Pinout
1. Drain (D): This is the terminal through which the current enters the transistor.
2. Source (S): This is the terminal through which the current exits the transistor.
3. Gate (G): This terminal controls the conductivity between the drain and source by applying a voltage.
In a depletion-mode MOSFET like the DN3135K1-G, the device is normally on (conducting) when no voltage is applied to the gate terminal. Applying a negative voltage to the gate relative to the source will turn the device off. These components are often used for switching and amplification purposes in various electronic circuits.