DN3135K1-G

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DN3135K1-G

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MOSFET N-CH 350V 72MA SOT23-3

  • ПроизводительТехнология микрочипов

  • Мфр. Часть #DN3135K1-G

  • Лист данных DN3135K1-G DataSheet

  • Пакет SOT-23-3

  • В наличии1599

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Спецификации

Атрибут Ценность
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 350 V
Current-ContinuousDrain(Id)@25°C 72mA (Tj)
DriveVoltage(MaxRdsOnMinRdsOn) 0V
RdsOn(Max)@IdVgs 35Ohm @ 150mA, 0V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 120 pF @ 25 V
FETFeature Depletion Mode
PowerDissipation(Max) 360mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3

Обзор

Description

The DN3135K1-G is a specific model of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), typically used in electronic circuits for switching and amplification purposes. This component is part of a series of transistors designed to handle high-speed, efficient switching, making it suitable for various applications, including power management in consumer electronics, automotive systems, and industrial equipment.
Key features of the DN3135K1-G often include low on-resistance, which enables efficient current flow, a high-speed switching capability for rapid on/off states, and robustness to handle significant power loads. These characteristics contribute to the component's effectiveness in minimizing energy loss and improving overall system performance.
Manufacturers generally package this MOSFET in a surface-mount format, facilitating easy integration into printed circuit boards (PCBs). Additionally, the "G" suffix usually denotes RoHS compliance, indicating that the component is manufactured without certain hazardous substances, aligning with environmental and safety standards.
To ensure proper functionality, designers must consider the MOSFET's voltage and current ratings in accordance with its intended application.

Equivalent

The DN3135K1-G is a MOSFET driver chip. Equivalent products may include similar MOSFET driver ICs from other manufacturers, such as:
1. Infineon IRF7103.
2. ON Semiconductor NTD4906N.
3. Vishay Si4532EY.
4. Texas Instruments CSD19534Q5A.

When selecting an equivalent, ensure compatibility in voltage, current ratings, and package type. Always refer to the datasheets for precise specifications.

Features

The DN3135K1-G is a dual N-channel MOSFET designed for power management applications. Here are its key features:
1. Dual N-Channel Design: It integrates two N-channel MOSFETs in a single package, optimizing space and simplifying design circuits.
2. Low On-Resistance: The device provides low on-resistance, which ensures efficient current flow and reduces power loss, improving overall system performance.
3. Compact Package: Encased in a small package, it is suitable for space-constrained applications, making it ideal for portable and compact electronic devices.
4. High-Speed Switching: The MOSFET offers fast switching speeds, beneficial for applications requiring quick response times.
5. Thermal Performance: Designed to handle heat effectively, offering reliability under various operating conditions.
6. Wide Range of Applications: Suitable for use in DC-DC converters, load switches, and other power management functions.
7. RoHS Compliant: The product is compliant with RoHS standards, ensuring it meets environmental and safety regulations.
These features make the DN3135K1-G a reliable choice for efficient power management in electronic applications.

Pinout

The DN3135K1-G is a single N-channel depletion-mode MOSFET. It typically comes in a 3-pin TO-92 package. The pin configuration is as follows:
1. Drain (D): This is the terminal through which the current enters the transistor.
2. Source (S): This is the terminal through which the current exits the transistor.
3. Gate (G): This terminal controls the conductivity between the drain and source by applying a voltage.
In a depletion-mode MOSFET like the DN3135K1-G, the device is normally on (conducting) when no voltage is applied to the gate terminal. Applying a negative voltage to the gate relative to the source will turn the device off. These components are often used for switching and amplification purposes in various electronic circuits.

Manufacturer

The DN3135K1-G is manufactured by Diodes Incorporated. Diodes Incorporated is a global company that specializes in the design, manufacturing, and supply of high-quality discrete, logic, analog, and mixed-signal semiconductors. The company serves a wide range of applications in various markets, including consumer electronics, computing, communications, industrial, and automotive sectors. Diodes Incorporated is known for its extensive product portfolio, which includes diodes, transistors, rectifiers, and other semiconductor devices. It focuses on delivering efficient and reliable components to meet the needs of its diverse customer base.

Application

The DN3135K1-G is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications, including switching power supplies, motor drives, and general-purpose electronic circuits. Its features, such as high-speed switching, low on-resistance, and high voltage handling, make it suitable for efficient power management in devices ranging from consumer electronics to industrial equipment. Additionally, its compact package allows for space-efficient designs, making it ideal for modern, compact electronic applications.

Package

The DN3135K1-G is a MOSFET transistor, and it typically comes in a surface-mount package. The specific package type for the DN3135K1-G is likely to be a PowerDI®3333, which is designed for efficient power handling and compact size in electronic circuits.

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