Изображения являются только для ссылки
FCD260N65S3
+БОМMOSFET N-CH 650V 12A TO252
-
ПроизводительОнсеми
-
Мфр. Часть #FCD260N65S3
-
Лист данных FCD260N65S3 DataSheet
-
В наличии20876
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | onsemi,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | SuperFET® III |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 12A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 260mOhm @ 6A, 10V |
| Vgs(th)(Max) @ Id | 4.5V @ 1.2mA |
| Gate Charge(Qg)(Max) @ Vgs | 24 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 1010 pF @ 400 V |
| Power Dissipation (Max) | 90W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
Обзор
Description
The FCD260N65S3 is a type of power semiconductor device, specifically a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), designed by Infineon Technologies. It is part of the company's CoolMOS™ series, which are known for their high efficiency and fast switching capabilities, making them suitable for a variety of power conversion applications.
Key features of the FCD260N65S3 include a voltage rating of 650V and a current rating of up to 22A, making it appropriate for use in high-voltage applications. It also demonstrates low on-resistance, which minimizes power losses and enhances overall efficiency. The device is built to handle high frequencies, beneficial in applications such as switch-mode power supplies, motor drives, and other industrial power systems.
The FCD260N65S3 is characterized by its robustness and reliability, offering excellent thermal performance and durability. This makes it a popular choice for engineers and designers looking to optimize power systems for both performance and energy efficiency.
Key features of the FCD260N65S3 include a voltage rating of 650V and a current rating of up to 22A, making it appropriate for use in high-voltage applications. It also demonstrates low on-resistance, which minimizes power losses and enhances overall efficiency. The device is built to handle high frequencies, beneficial in applications such as switch-mode power supplies, motor drives, and other industrial power systems.
The FCD260N65S3 is characterized by its robustness and reliability, offering excellent thermal performance and durability. This makes it a popular choice for engineers and designers looking to optimize power systems for both performance and energy efficiency.
Equivalent
The FCD260N65S3 is a specific MOSFET, and equivalent products typically include MOSFETs with similar voltage, current, and switching characteristics. Possible equivalents might include the Infineon IPT65R028G7, Nexperia PSMN1R7-65PS, and STMicroelectronics STW65N65DM6, among others. When selecting an equivalent, ensure that the specifications such as Rds(on), Vds, Id, and package type match the requirements of your application. Always verify with the manufacturer's datasheets to ensure compatibility.
Features
The FCD260N65S3 is a power semiconductor device, specifically an IGBT (Insulated Gate Bipolar Transistor), known for its efficiency and performance in high-power applications. Key features include:
1. High Voltage Capability: It supports a voltage rating of 650V, making it suitable for applications requiring high voltage handling.
2. Current Rating: The device can handle a continuous collector current of up to 260A, ensuring reliability in demanding environments.
3. Low On-State Voltage Drop: It offers a low V_CE(sat), which reduces power losses and enhances efficiency.
4. Soft Switching Characteristics: Designed for low switching losses, it supports soft switching, which minimizes electromagnetic interference and improves efficiency.
5. Robust Construction: The device is built to withstand thermal and mechanical stress, ensuring longevity and reliability.
6. Fast Switching Speed: It features quick turn-on and turn-off times, making it suitable for high-frequency applications.
These features make the FCD260N65S3 ideal for use in applications such as inverters, motor drives, and power supplies.
1. High Voltage Capability: It supports a voltage rating of 650V, making it suitable for applications requiring high voltage handling.
2. Current Rating: The device can handle a continuous collector current of up to 260A, ensuring reliability in demanding environments.
3. Low On-State Voltage Drop: It offers a low V_CE(sat), which reduces power losses and enhances efficiency.
4. Soft Switching Characteristics: Designed for low switching losses, it supports soft switching, which minimizes electromagnetic interference and improves efficiency.
5. Robust Construction: The device is built to withstand thermal and mechanical stress, ensuring longevity and reliability.
6. Fast Switching Speed: It features quick turn-on and turn-off times, making it suitable for high-frequency applications.
These features make the FCD260N65S3 ideal for use in applications such as inverters, motor drives, and power supplies.
Manufacturer
The FCD260N65S3 is a product manufactured by ON Semiconductor. ON Semiconductor is a company that specializes in the design and manufacture of semiconductors. The company provides a wide range of products, including power management solutions, analog devices, sensors, and custom devices, serving various sectors such as automotive, industrial, consumer, and communication markets. Their focus is on energy-efficient innovations and delivering comprehensive solutions to enhance the performance and power efficiency of electronic devices.
Application
The FCD260N65S3 is a type of power MOSFET, often used in applications requiring efficient power management and high-speed switching. Common application areas include:
1. Switching Power Supplies: Used in converters and inverters for improved energy efficiency.
2. Motor Drives: Suitable for driving motors in industrial and consumer electronics.
3. Solar Inverters: Facilitates efficient energy conversion in solar power systems.
4. Uninterruptible Power Supplies (UPS): Ensures reliable power delivery during outages.
5. Lighting Systems: Utilized in LED drivers for efficient lighting solutions.
These applications benefit from the MOSFET's low on-resistance and high-speed switching capabilities, which enhance performance and efficiency.
1. Switching Power Supplies: Used in converters and inverters for improved energy efficiency.
2. Motor Drives: Suitable for driving motors in industrial and consumer electronics.
3. Solar Inverters: Facilitates efficient energy conversion in solar power systems.
4. Uninterruptible Power Supplies (UPS): Ensures reliable power delivery during outages.
5. Lighting Systems: Utilized in LED drivers for efficient lighting solutions.
These applications benefit from the MOSFET's low on-resistance and high-speed switching capabilities, which enhance performance and efficiency.
Package
The FCD260N65S3 typically comes in a TO-247 package. This is a common type of power semiconductor package used for housing high-power transistors and similar components.
