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FDB0190N807L
+БОМMOSFET N-CH 80V 270A TO263-7
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ПроизводительОнсеми
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Мфр. Часть #FDB0190N807L
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В наличии6560
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 270A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 34A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 249 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 19110 pF @ 40 V |
| Power Dissipation (Max) | 3.8W (Ta), 250W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263-7 |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Base Product Number | FDB0190 |
Обзор
Description
FDB0190N807L is a silicon N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for switching applications. It is characterized by its ability to efficiently control electrical power in various circuits, making it ideal for use in power management systems, motor drivers, and amplifiers.
Key specifications include a high breakdown voltage, low on-resistance, and fast switching speeds, which contribute to energy efficiency in electronic devices. This MOSFET is typically housed in a compact package, facilitating integration into diverse applications, from consumer electronics to industrial equipment.
The device operates under specific thermal and electrical limits, ensuring reliability and performance in high-demand situations. Understanding its parameters, such as gate threshold voltage, maximum drain current, and thermal resistance, is crucial for proper application and to prevent potential damage. Overall, the FDB0190N807L is a versatile component that plays a significant role in modern electronic design.
Key specifications include a high breakdown voltage, low on-resistance, and fast switching speeds, which contribute to energy efficiency in electronic devices. This MOSFET is typically housed in a compact package, facilitating integration into diverse applications, from consumer electronics to industrial equipment.
The device operates under specific thermal and electrical limits, ensuring reliability and performance in high-demand situations. Understanding its parameters, such as gate threshold voltage, maximum drain current, and thermal resistance, is crucial for proper application and to prevent potential damage. Overall, the FDB0190N807L is a versatile component that plays a significant role in modern electronic design.
Equivalent
The FDB0190N807L is a N-channel MOSFET. Equivalent products include the IRF3205, STP75NF75, and BUK956R-40. Always verify specifications such as voltage, current ratings, and package type to ensure compatibility for your specific application.
Features
The FDB0190N807L is a N-channel MOSFET designed for a range of power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 80V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain currents of up to 190A, providing significant power handling capability.
3. On-resistance (Rds(on)): It features a low on-resistance, typically around 2.5 mΩ, which minimizes power loss and improves efficiency.
4. Fast Switching: The MOSFET supports fast switching speeds, ideal for high-frequency applications in power conversion and switching power supplies.
5. Thermal Performance: It has a robust thermal performance, with a high junction-to-ambient thermal resistance allowing for effective heat dissipation.
6. Package Type: Typically available in a TO-220 or similar package, facilitating easy mounting and heat management.
Overall, the FDB0190N807L is well-suited for applications in power management, motor control, and automotive electronics.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 80V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain currents of up to 190A, providing significant power handling capability.
3. On-resistance (Rds(on)): It features a low on-resistance, typically around 2.5 mΩ, which minimizes power loss and improves efficiency.
4. Fast Switching: The MOSFET supports fast switching speeds, ideal for high-frequency applications in power conversion and switching power supplies.
5. Thermal Performance: It has a robust thermal performance, with a high junction-to-ambient thermal resistance allowing for effective heat dissipation.
6. Package Type: Typically available in a TO-220 or similar package, facilitating easy mounting and heat management.
Overall, the FDB0190N807L is well-suited for applications in power management, motor control, and automotive electronics.
Pinout
The FDB0190N807L is a N-channel MOSFET with a total of 5 pins. Its pin configuration is as follows:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output terminal where current flows out.
3. Source (S): The input terminal where current flows in.
The primary function of the FDB0190N807L is to act as an electronic switch or amplifier in various applications, including power management, motor control, and signal switching. It is designed to handle high voltages and currents, making it suitable for high-performance power circuits. The device typically features low on-resistance, which helps minimize power loss during operation.
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output terminal where current flows out.
3. Source (S): The input terminal where current flows in.
The primary function of the FDB0190N807L is to act as an electronic switch or amplifier in various applications, including power management, motor control, and signal switching. It is designed to handle high voltages and currents, making it suitable for high-performance power circuits. The device typically features low on-resistance, which helps minimize power loss during operation.
Manufacturer
The FDB0190N807L is manufactured by ON Semiconductor, a company that specializes in semiconductor components and solutions. ON Semiconductor is known for its wide range of products, including analog, discrete, and power management devices, catering to various markets such as automotive, industrial, communications, consumer electronics, and computing.
Founded in 1999, ON Semiconductor has established itself as a key player in the semiconductor industry, focusing on energy-efficient technologies and innovation. The company operates globally, providing a variety of solutions that help in enhancing performance and efficiency in electronic designs. Their products are integral to applications ranging from power supplies and lighting to automotive safety systems and wireless communication.
Founded in 1999, ON Semiconductor has established itself as a key player in the semiconductor industry, focusing on energy-efficient technologies and innovation. The company operates globally, providing a variety of solutions that help in enhancing performance and efficiency in electronic designs. Their products are integral to applications ranging from power supplies and lighting to automotive safety systems and wireless communication.
Application
FDB0190N807L is an N-channel MOSFET primarily used in power management applications. Its application areas include:
1. Switching Power Supplies: For efficient voltage regulation and conversion.
2. DC-DC Converters: Used in both step-up and step-down conversion processes.
3. Motor Control: Employed in driving motors for precise control.
4. LED Drivers: Efficiently managing power for LED lighting applications.
5. Battery Management Systems: In power routing and protection circuits.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications, enhancing efficiency and performance.
1. Switching Power Supplies: For efficient voltage regulation and conversion.
2. DC-DC Converters: Used in both step-up and step-down conversion processes.
3. Motor Control: Employed in driving motors for precise control.
4. LED Drivers: Efficiently managing power for LED lighting applications.
5. Battery Management Systems: In power routing and protection circuits.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications, enhancing efficiency and performance.
Package
The FDB0190N807L is packaged in a TO-220 form factor. This package type is designed for efficient heat dissipation and is commonly used in power applications.
