FDB52N20TM

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FDB52N20TM

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MOSFET N-CH 200V 52A D2PAK

  • ПроизводительОнсеми

  • Мфр. Часть #FDB52N20TM

  • Лист данных FDB52N20TM DataSheet

  • В наличии6740

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Спецификации

Атрибут Ценность
Series UniFET™
Part Status Active
Base Product Number FDB52N20
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 49mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 25 V
Power Dissipation (Max) 357W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2PAK)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging Cut Tape (CT), Tape & Reel (TR)

Обзор

Description

The FDB52N20TM is an N-channel power MOSFET from ON Semiconductor, designed for high-efficiency switching applications. Key features include:
- Voltage Rating: 200V
- Current Rating: 52A (continuous)
- Low On-Resistance (RDS(on)): 28mΩ (max) at 10V VGS
- Fast Switching: Optimized for reduced switching losses
- Package: TO-252 (DPAK), suitable for surface-mount applications
Ideal for power supplies, motor control, and DC-DC converters, it offers robust performance with low conduction losses. Its high current capability and thermal efficiency make it suitable for demanding industrial and automotive applications.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the FDB52N20TM (200V, 52A N-channel MOSFET) include:
- IRFB4227PbF (200V, 57A)
- STP80NF20 (200V, 80A)
- IPP052N08N5 (80V, 120A, but similar in some applications)
- AUIRF200P222 (200V, 60A)
Check datasheets for exact compatibility in your circuit.

Features

The FDB52N20TM is an N-channel MOSFET with the following key features:
- Voltage Rating: 200V
- Current Rating: 52A (continuous)
- Low On-Resistance (RDS(on)): 28mΩ (max) @ VGS=10V
- Fast Switching: Optimized for high-efficiency applications
- Avalanche Energy Rated: Robust against inductive load spikes
- Package: TO-252 (DPAK), surface-mount design
- Low Gate Charge (Qg): Enhances switching performance
- Applications: Power supplies, motor control, DC-DC converters
This MOSFET balances high current handling with low conduction losses, making it suitable for power management in demanding circuits.

Package

The FDB52N20TM is a PowerTrench MOSFET from ON Semiconductor, packaged in a TO-263-3 (D2PAK) surface-mount package. This package is designed for high-power applications, offering efficient thermal performance and a compact footprint. It is commonly used in switching power supplies, motor control, and other high-current circuits.

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