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NTMFS5C430NT1G
+БОМMOSFET N-CH 40V 35A/185A 5DFN
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ПроизводительОнсеми
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Мфр. Часть #NTMFS5C430NT1G
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В наличии7166
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
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Спецификации
| Атрибут | Ценность |
| Part Status | Active |
| Base Product Number | NTMFS5 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta), 185A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 25 V |
| Power Dissipation (Max) | 3.8W (Ta), 106W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Обзор
Description
### Key Features:
- Low On-Resistance (RDS(on)): 1.7 mΩ (max) at VGS = 10V, reducing conduction losses.
- High Current Handling: Supports up to 60A continuous drain current (ID).
- Fast Switching: Optimized for high-frequency operation.
- Power-Saving Design: Low gate charge (Qg) and low thermal resistance improve efficiency.
- Package: DFN5x6 (5x6mm), offering compact footprint and good thermal performance.
### Applications:
- Power supplies (synchronous rectification, buck/boost converters).
- Battery management (discharge protection, load switches).
- Motor drives & automotive systems.
This MOSFET is ideal for high-current, low-voltage designs requiring minimal power loss and compact packaging.
Equivalent
- Infineon BSC030NE2LS5 (30V, 100A)
- Vishay SiR430DP (30V, 60A)
- ON Semiconductor NVMFS5C430N (30V, 60A)
- Renesas RJK0305DPB (30V, 60A)
Check datasheets for exact compatibility in your application.
Pinout
Pin Functions:
1. Gate (G) – Controls the MOSFET switching.
2. Drain (D1, D2, D3) – Three pins connected internally to the drain terminal for lower resistance and better heat dissipation.
4. Source (S) – Output and return path for current.
This 30V, 60A MOSFET is optimized for high-efficiency power switching in applications like DC-DC converters and motor drivers. The DFN5 package enhances thermal performance with an exposed drain pad.
Application
1. DC-DC Converters: Used in voltage regulation for servers, telecom, and industrial systems.
2. Load Switches: Efficient power management in portable devices like smartphones and tablets.
3. Motor Control: Drives small motors in automotive and consumer electronics.
4. Battery Protection: Safeguards circuits in power tools and energy storage systems.
Its low on-resistance (RDS(on)) and compact package make it ideal for space-constrained, high-performance designs.