Спецификации
| Атрибут | Ценность |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 1.25A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 170mOhm @ 1.25A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 13.8 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 430 pF @ 30 V |
| PowerDissipation(Max) | 500mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 |
Обзор
Description
The FDN5618P is a P-channel MOSFET from ON Semiconductor, designed for low-voltage, high-efficiency switching applications. Key features include:
- Voltage Rating: -30V (drain-to-source, VDS).
- Current Rating: -2.5A (continuous drain current, ID).
- Low On-Resistance (RDS(on)): ~50mΩ (at VGS = -10V).
- Compact Package: SOT-23 (small footprint, suitable for space-constrained designs).
- Fast Switching: Optimized for power management in portable devices, load switches, and battery protection circuits.
Ideal for low-side switching, power distribution, and DC-DC conversion in consumer electronics, IoT, and embedded systems. Its P-channel configuration simplifies drive circuitry in high-side applications.
For detailed specs, refer to the datasheet or ON Semiconductor’s official resources.
- Voltage Rating: -30V (drain-to-source, VDS).
- Current Rating: -2.5A (continuous drain current, ID).
- Low On-Resistance (RDS(on)): ~50mΩ (at VGS = -10V).
- Compact Package: SOT-23 (small footprint, suitable for space-constrained designs).
- Fast Switching: Optimized for power management in portable devices, load switches, and battery protection circuits.
Ideal for low-side switching, power distribution, and DC-DC conversion in consumer electronics, IoT, and embedded systems. Its P-channel configuration simplifies drive circuitry in high-side applications.
For detailed specs, refer to the datasheet or ON Semiconductor’s official resources.
Pinout
The FDN5618P is a P-channel MOSFET in a SOT-23 package with 3 pins:
1. Gate (G): Controls the MOSFET's switching.
2. Source (S): Connected to the input voltage (typically higher potential for P-channel).
3. Drain (D): Output connection, conducts current when the MOSFET is on.
Key Features:
- Logic-level gate drive (suitable for 3.3V/5V).
- Low on-resistance (RDS(on)) for efficient power switching.
- -30V drain-source voltage (VDS) and -3.3A continuous drain current (ID).
Commonly used in load switching, power management, and battery protection circuits.
1. Gate (G): Controls the MOSFET's switching.
2. Source (S): Connected to the input voltage (typically higher potential for P-channel).
3. Drain (D): Output connection, conducts current when the MOSFET is on.
Key Features:
- Logic-level gate drive (suitable for 3.3V/5V).
- Low on-resistance (RDS(on)) for efficient power switching.
- -30V drain-source voltage (VDS) and -3.3A continuous drain current (ID).
Commonly used in load switching, power management, and battery protection circuits.
Package
The FDN5618P is a P-channel MOSFET available in a SOT-23 surface-mount package. This compact 3-pin package is widely used for low-power applications, offering small size and good thermal performance. Key dimensions are approximately 2.9mm x 1.3mm x 0.95mm. It's suitable for space-constrained designs like portable electronics.
