FDP18N50

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FDP18N50

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MOSFET N-CH 500V 18A TO220-3

  • ПроизводительОнсеми

  • Мфр. Часть #FDP18N50

  • Лист данных FDP18N50 DataSheet

  • Пакет TO-220-3

  • В наличии2956

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Спецификации

Атрибут Ценность
Package Bulk,Tube
Series UniFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 500 V
Current-ContinuousDrain(Id)@25°C 18A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 265mOhm @ 9A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 60 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 2860 pF @ 25 V
PowerDissipation(Max) 235W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220-3

Обзор

Description

The FDP18N50 is a specific type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. Key features of the FDP18N50 include a drain-to-source voltage (V_DS) rating of 500V and a continuous drain current (I_D) of 18A. The device is built using advanced technology to offer fast switching speeds, low on-resistance, and high efficiency, making it suitable for use in power converters, motor control systems, and switching power supplies.
The MOSFET's construction provides robustness and efficiency, ensuring it can handle significant power levels while minimizing energy loss. It is often used in scenarios where efficient power management and thermal performance are critical. The FDP18N50 is encapsulated in a standard TO-220 package, which aids in heat dissipation and ease of integration into various electronic circuits. These characteristics make it a reliable choice for engineers looking for a durable and high-performance solution in power electronic applications.

Equivalent

The FDP18N50 is an N-channel MOSFET. Equivalent products include the IRF540N, STP22NF10, and the FQA18N50. These equivalents should have similar voltage and current ratings but always verify the specific parameters such as Rds(on), threshold voltage, and package compatibility with your application. It's essential to consult the datasheets of the equivalents to ensure they meet your circuit requirements.

Features

The FDP18N50 is a N-channel MOSFET designed for high-efficiency power switching applications. Here are its key features:
1. Voltage and Current Ratings: It has a drain-source voltage (V_ds) of 500V and a continuous drain current (I_d) of 18A, making it suitable for high-voltage applications.
2. R_DS(on): The device features a low on-state resistance, which reduces conduction losses and improves efficiency.
3. Package Type: It is typically available in a TO-220 package, which provides good thermal performance and is easy to mount on a heatsink.
4. Fast Switching: The MOSFET provides fast switching speeds, which help in reducing switching losses in high-frequency applications.
5. Thermal Characteristics: It has a good thermal resistance from junction to case, which aids in effective heat dissipation.
6. Applications: Commonly used in power supplies, motor controllers, and other applications requiring high efficiency and reliability.
These features make the FDP18N50 a robust and versatile choice for various power management applications.

Pinout

The FDP18N50 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in power applications. It typically comes in a TO-220 package, which is standard for such components. The pin count for a TO-220 package is usually three:
1. Gate (G): This pin is responsible for controlling the conductivity between the drain and source. A voltage applied to the gate determines whether the MOSFET is on or off.
2. Drain (D): This pin is connected to the load, and it is where the current flows out of the transistor when it is in the "on" state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for the current flowing through the drain.
These pins support the basic operation of the transistor, where the gate voltage controls the connection between the drain and source, allowing it to act as a switch or amplifier.

Manufacturer

The FDP18N50 is manufactured by onsemi, which was formerly known as ON Semiconductor. onsemi is a global semiconductor company that designs and manufactures a broad range of semiconductor components used in various electronic devices and systems. The company is involved in providing energy-efficient solutions, including power and signal management, logic, discrete components, and custom devices for various markets such as automotive, communications, computing, consumer electronics, industrial, medical, and military/aerospace applications. Onsemi is recognized for its innovation in power and signal management technologies, aiming to enhance performance and energy efficiency across different sectors.

Application

The FDP18N50 is a power MOSFET designed for high-voltage applications. Its primary application areas include:
1. Power Supplies: Used in switched-mode power supplies (SMPS) for efficient power conversion.
2. Motor Drives: Employed in driving motors for industrial and automotive applications due to its high efficiency and fast switching capabilities.
3. Converters and Inverters: Utilized in DC-DC converters and DC-AC inverters, particularly in renewable energy systems like solar inverters.
4. Lighting: Applied in electronic ballasts for fluorescent and LED lighting systems.
5. Uninterruptible Power Supplies (UPS): Used in UPS systems for reliable power backup solutions.
These applications benefit from its ability to handle high voltage and current with low switching losses.

Package

The FDP18N50 is a power MOSFET typically packaged in a TO-220 package.

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