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FDS9958
+БОМMOSFET 2P-CH 60V 2.9A 8-SO
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ПроизводительОнсеми
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Мфр. Часть #FDS9958
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Лист данных FDS9958 DataSheet
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Пакет SOIC-8
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В наличии4426
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain(Id) @ 25°C | 2.9A |
| Rds On(Max) @ Id Vgs | 105mOhm @ 2.9A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 23nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 1020pF @ 30V |
| Power - Max | 900mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Обзор
Description
- Low On-Resistance (RDS(on)): Typically 28 mΩ (at VGS = 4.5V), reducing power loss.
- High Current Handling: Supports up to 6.3A continuous drain current.
- Compact Package: Comes in an 8-pin SOIC, saving board space.
- Logic-Level Gate Drive: Operates at low gate voltages (as low as 2.5V), making it suitable for microcontroller-based systems.
Common uses include DC-DC converters, motor control, load switching, and battery protection circuits. Its dual-MOSFET configuration allows for efficient synchronous rectification in switching power supplies.
For detailed specs, refer to the datasheet from the manufacturer (e.g., Fairchild/ON Semiconductor). Always ensure proper heat dissipation in high-current applications.
Equivalent
- IRF7314 (International Rectifier)
- Si4946DY (Vishay)
- DMN2010LSD (Diodes Inc.)
- AO4822 (Alpha & Omega)
These alternatives offer comparable specs (30V, ~5-10A, dual N-channel). Verify pinout and electrical characteristics for compatibility.
Features
- Voltage Rating: 30V
- Current Rating: 12A (continuous)
- Low On-Resistance (RDS(on)): 9.5mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Low Gate Charge (Qg): Enhances switching performance
- Power Dissipation: 2.5W (max)
- Package: SO-8 (Surface Mount)
- Applications: DC-DC converters, motor control, load switching
It offers a good balance of low conduction losses and fast switching, making it suitable for power management in compact designs.
Pinout
Pin Functions:
1. Source 1 (S1) – Source terminal of MOSFET 1.
2. Gate 1 (G1) – Gate control for MOSFET 1.
3. Source 2 (S2) – Source terminal of MOSFET 2.
4. Gate 2 (G2) – Gate control for MOSFET 2.
5. Drain 2 (D2) – Drain terminal of MOSFET 2.
6. Drain 2 (D2) – Internally connected to pin 5.
7. Drain 1 (D1) – Drain terminal of MOSFET 1.
8. Drain 1 (D1) – Internally connected to pin 7.
Key Features:
- Dual N-channel MOSFET (30V, 5.3A each).
- Low on-resistance (RDS(on)) for efficient switching.
- Logic-level gate drive (compatible with 5V signals).
Commonly used in power management, motor control, and load switching.
Application
- Power Supplies: DC-DC converters, voltage regulators.
- Motor Control: H-bridge circuits for small motors.
- Load Switching: Efficient on/off control in portable devices.
- Battery Management: Protection circuits in power tools/consumer electronics.
- Automotive Systems: LED drivers, infotainment power control.
Its low on-resistance (RDS(on)) and compact SO-8 package make it ideal for space-constrained, high-efficiency designs.
