FQA11N90C

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FQA11N90C

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MOSFET N-CH 900V 11A TO3P

  • ПроизводительОнсеми

  • Мфр. Часть #FQA11N90C

  • В наличии4463

365 Дни гарантии качества

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90-гарантия послепродажного дня

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Спецификации

Атрибут Ценность
Series QFET®
Part Status Obsolete
Base Product Number FQA1
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.1Ohm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3290 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3
Packaging Tube

Обзор

Description

The FQA11N90C is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for high-efficiency power conversion applications. Key features include a maximum continuous drain current of 11A, a drain-source voltage (Vds) of 900V, and a low on-resistance, which contributes to reduced power loss and improved efficiency. The device is typically used in applications such as power supplies, inverters, and motor controls.
The FQA11N90C comes in a TO-3P package, which helps in efficient heat dissipation, making it suitable for high-power applications. Its high voltage capacity and robust design also make it suitable for use in industrial, automotive, and consumer electronics that require reliable high-voltage switching. Additionally, it features a fast switching speed, which is beneficial in applications demanding quick response times. The FQA11N90C is part of a broader family of MOSFETs designed to offer high performance in demanding environments.

Equivalent

The FQA11N90C is an N-channel MOSFET. Its equivalent products include:
1. IRFP460
2. STP11NK90Z
3. IXFH12N90
4. FDPF12N50
5. 2SK3568
Always verify the specifications, such as voltage, current, and package type, to ensure compatibility with your application.

Features

The FQA11N90C is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its use in power management applications. Key features include:
1. Voltage Rating: It has a high voltage rating, typically around 900V, making it suitable for high-voltage applications.
2. Current Capacity: This MOSFET can handle a continuous current of approximately 11A.
3. Low On-Resistance: It offers a low on-state resistance, which helps in reducing power loss and increasing efficiency.
4. Fast Switching: The FQA11N90C is designed for fast switching speeds, which improves performance in switching applications.
5. TO-3P Package: It is commonly available in a TO-3P package, which provides good thermal performance and easy mounting on heat sinks.
6. Robust Design: The device is built to withstand high energy in avalanche and commutation modes, enhancing its reliability in demanding environments.
7. Applications: Typical applications include switch-mode power supplies, motor controls, and other power conversion systems.
These features make the FQA11N90C a versatile choice for various electronic applications requiring efficient power management.

Pinout

The FQA11N90C is a N-channel MOSFET. It typically comes in a TO-3P package. The pin count for this package is usually three pins:
1. Gate (G): This pin controls the MOSFET, turning it on or off by applying voltage.
2. Drain (D): This pin is the output; it conducts current from the drain to the source when the MOSFET is on.
3. Source (S): This is the return path for the current flowing through the drain.
The FQA11N90C is designed for high-voltage applications and can handle a maximum drain-source voltage of 900V with a continuous drain current of approximately 11A. It's commonly used in power supply circuits, motor controllers, and other high-power applications to act as a switch or amplifier.

Manufacturer

The FQA11N90C is manufactured by ON Semiconductor. ON Semiconductor is a leading global provider of semiconductor solutions, specializing in energy-efficient products that help engineers solve their unique design challenges in automotive, industrial, cloud, and IoT applications. The company supplies a broad range of products, including power and signal management, logic, discrete, and custom devices. ON Semiconductor focuses on driving innovation in key areas such as automotive, industrial, and communications infrastructure, contributing to advancements in energy efficiency, safety, and performance.

Application

The FQA11N90C is a power MOSFET, commonly used in various electronic applications. Its primary application areas include:
1. Power Supplies: Used in switched-mode power supplies (SMPS) for efficient power conversion.
2. Motor Control: Utilized in motor drivers and controllers for industrial and consumer applications.
3. Inverters: Applied in power inverters for renewable energy systems like solar inverters.
4. Lighting: Employed in LED and HID lighting systems for efficient power management.
5. Audio Amplifiers: Used in high-power audio amplifiers for improved sound quality.
6. Telecommunications: Integrated into telecom power systems for enhanced power handling.
These applications leverage the MOSFET's high voltage capability and fast switching properties.

Package

The FQA11N90C is a N-channel MOSFET. It typically comes in a TO-3P package, which is a type of through-hole mount package used for high-power semiconductors.

Frequently Asked Questions


Q: What is the maximum drain-source voltage for the FQA11N90C?
A: The maximum drain-source voltage (Vdss) is 900 V, suitable for high-voltage switching applications.


Q: Can this MOSFET be driven with a 5V logic level?
A: No, the typical threshold voltage (Vgs(th)) is up to 5V at 250µA; a 10V drive voltage is recommended for optimal Rds(on).


Q: What is the maximum continuous drain current at 25°C?
A: It is 11A (Tc) at a case temperature of 25°C, per the datasheet specifications.


Q: What is the on-resistance (Rds(on)) value?
A: Maximum Rds(on) is 1.1 Ohm at Id = 5.5A and Vgs = 10V.


Q: What is the gate charge (Qg) required to switch this device?
A: The typical gate charge is 80 nC at Vgs = 10V, indicating moderate gate drive requirements.


Q: What package type does this part use?
A: It uses a through-hole TO-3P package (TO-3P-3, SC-65-3), designed for high-power dissipation up to 300W.


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