FQB44N10TM

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FQB44N10TM

+БОМ

MOSFET N-CH 100V 43.5A D2PAK

  • ПроизводительОнсеми

  • Мфр. Часть #FQB44N10TM

  • Лист данных FQB44N10TM DataSheet

  • В наличии22602

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Спецификации

Атрибут Ценность
Supplier onsemi
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series QFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 43.5A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 39mOhm @ 21.75A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 62 nC @ 10 V
Vgs(Max) ±25V
Input Capacitance(Ciss)(Max) @ Vds 1800 pF @ 25 V
Power Dissipation (Max) 3.75W (Ta), 146W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)

Обзор

Description

The FQB44N10TM is a specific model of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for electronic switching and amplification applications. It features a low on-resistance and high-speed switching capability, which makes it suitable for efficient power management in a variety of applications. The device can handle a significant amount of current and voltage, typically around 44 Amps and 100 Volts, making it ideal for use in power supplies, motor controllers, and other high-power electronics.
Manufactured by Fairchild Semiconductor, the FQB44N10TM is packaged in a TO-263 surface-mount package, providing compactness and efficiency for circuit integration. It is designed to operate with low gate charge, reducing the power loss and enhancing overall efficiency. The MOSFET's robust design allows it to handle varying temperatures and environmental conditions, making it reliable in both industrial and consumer electronics. Its combination of high performance and reliability makes the FQB44N10TM a popular choice in the design of power electronic systems.

Equivalent

The FQB44N10TM is an N-channel MOSFET commonly used in electronic applications. Equivalent products include:
1. IRF1010N: Similar voltage and current ratings.
2. IRF540N: Comparable performance for general purposes.
3. STP55NF06: Suitable for similar voltage and current applications.
4. FDP047N10: Offers similar characteristics.
Always verify the specifications like voltage, current, Rds(on), and package type before substituting to ensure compatibility with your application.

Features

The FQB44N10TM is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications requiring efficient power management. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 100V.
2. Current Handling: The device supports a continuous drain current (I_D) of up to 44A under specific conditions.
3. R_DS(on): It has a low on-resistance, typically around 18 mΩ at a gate-source voltage (V_GS) of 10V, which improves efficiency by minimizing power loss.
4. Package Type: The FQB44N10TM is commonly available in a TO-263 (D2PAK) package, which is suitable for surface mounting and offers good thermal performance.
5. Temperature Range: It operates effectively within a wide temperature range, typically from -55°C to 175°C.
6. Applications: It is suitable for use in high-speed switching applications, motor drives, power converters, and other power management systems.
These features make it a versatile component for designers looking for durability and performance in power electronic circuits.

Pinout

The FQB44N10TM is a N-channel MOSFET. It typically comes in a TO-263 package, which is a surface-mount version of the TO-220. The device has three pins:
1. Gate (G): This pin is used to control the conductivity between the drain and source. It is where the input signal is applied to turn the MOSFET on or off.
2. Drain (D): This pin is where the load is connected, and it is the terminal through which the current flows out of the MOSFET when it is in the conducting state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It is the return path for the current flowing through the drain.
The primary function of the FQB44N10TM is to switch or amplify electronic signals in applications such as power management, motor drives, and switching regulators. It offers features like high-speed switching and low on-resistance, which makes it efficient for use in high-power applications.

Manufacturer

The FQB44N10TM is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a reputable American company that specializes in semiconductor manufacturing. They provide a broad range of products including power and signal management, logic, discrete, and custom devices for various applications. These applications are primarily in the automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace, and power sectors. As a leading provider in the semiconductor industry, onsemi focuses on energy-efficient innovations, aiming to create products that reduce global energy usage while enhancing productivity and reliability.

Application

The FQB44N10TM is a N-channel MOSFET commonly used in applications requiring efficient power switching and control. Its typical application areas include:
1. Power Supply Units (PSUs) - Used for switching and voltage regulation.
2. Motor Drivers - Facilitates control in DC motor driver circuits.
3. DC-DC Converters - Employed for efficient voltage conversion.
4. Battery Management Systems - Helps in charging and discharging regulation.
5. Automotive Applications - Utilized in various control systems due to its reliability.
6. Load Switches - Used for switching loads in electronic devices and systems.
These applications leverage the MOSFET's capability to handle high currents and voltages efficiently.

Package

The FQB44N10TM is a power MOSFET, and its package type is TO-263, also known as D2PAK. This package is commonly used for surface-mount applications and is designed to handle high power with efficient heat dissipation.

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