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FQD10N20LTM
+БОМMOSFET N-CH 200V 7.6A TO252
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ПроизводительОнсеми
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Мфр. Часть #FQD10N20LTM
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Лист данных FQD10N20LTM DataSheet
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В наличии29809
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 7.6A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V |
| Rds On(Max) @ Id Vgs | 360mOhm @ 3.8A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 17 nC @ 5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 830 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta), 51W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
Обзор
Description
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, making it suitable for medium to high voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 10A, allowing it to handle substantial current loads.
3. R_DS(on): The on-resistance is relatively low, which minimizes power loss and improves efficiency when the transistor is in the 'on' state.
4. Package: It is typically available in a TO-252 (DPAK) package, which provides a compact form factor suitable for surface mounting.
5. Applications: The FQD10N20LTM is commonly used in power management tasks such as DC-DC converters, motor drives, and various switching applications.
Overall, this MOSFET offers a balance of efficiency and performance for power handling tasks in electronic circuits.
Equivalent
Features
1. Voltage and Current Ratings: It has a maximum drain-source voltage (Vds) of 200V and a continuous drain current (Id) of 10A, making it suitable for medium to high-power applications.
2. Rds(on): The MOSFET offers a low on-resistance (Rds(on)) of approximately 0.28 ohms, enhancing efficiency by reducing power loss during operation.
3. Package: It is available in a TO-252 package, which provides good thermal performance and compactness for surface mount applications.
4. Thermal Characteristics: The device has a total power dissipation of around 2.5 watts, with a junction temperature range from -55°C to +175°C, allowing for reliable performance in various environmental conditions.
5. Applications: Typical applications include power management, load switching, and motor control.
These features make the FQD10N20LTM a versatile and efficient choice for driving and switching applications in both consumer electronics and industrial systems.
Pinout
1. Gate (G): This pin controls the flow of current between the drain and source. Applying a voltage to the gate allows current to flow through the MOSFET.
2. Drain (D): The drain is where the current enters the MOSFET when it is in the 'on' state.
3. Source (S): The source is where the current exits the MOSFET.
Additionally, the tab of the TO-252 package is usually connected to the drain, enhancing heat dissipation. The FQD10N20LTM is designed for high-speed switching applications and can handle a maximum voltage of 200V and a continuous current of up to 10A. It is commonly used in power management applications, including power conversion and motor control.
Manufacturer
Application
1. Power Supply Units: Used in converters and inverters for efficient energy conversion.
2. Motor Control: Suitable for driving motors in various electronic devices.
3. LED Drivers: Helps in regulating power supply to LED lighting systems.
4. Battery Management Systems: Ensures efficient charging and discharging cycles.
5. Automotive Systems: Supports electronic control units and power distribution.
6. Consumer Electronics: Utilized in devices requiring efficient power handling.
These applications leverage the MOSFET's low on-resistance and fast switching capabilities.